Comparison of fluctuating potentials and donor-acceptor pair transitions in a Cu-poor Cu2ZnSnS4 based solar cell: Applied Physics Letters: Vol 105, No 16

Abstract

The structure of the electronic energy levels of a single phase Cu₂ZnSnS₄ film, as confirmed by Raman Scattering and x-ray diffraction, is investigated through a dependence on the excitation power of the photoluminescence (PL). The behavior of the observed asymmetric band, with a peak energy at ∼1.22 eV, is compared with two theoretical models: (i) fluctuating potentials and (ii) donor-acceptor pair transitions. It is shown that the radiative recombination channels in the Cu-poor film are strongly influenced by tail states in the bandgap as a consequence of a heavy doping and compensation levels. The contribution of the PL for the evaluation of secondary phases is also highlighted.

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Comparison of fluctuating potentials and donor-acceptor pair transitions in a Cu-poor Cu₂ZnSnS₄ based solar cell

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