Abstract
The diffusion behavior of Zn in solar-grade (CIGSe) is found to be similar to that in epitaxial (CISe), which indicates that grain boundaries only play a minor role as segregation sites and fast-transport pathways. The diffusivity obeys the Arrhenius equation DZn = 3.8 × 10−3exp(−1.24 eV∕kBT) cm2 s−1. Surprisingly, the diffusion profiles obtained by the radiotracer technique exhibit anomalous shapes with a second maximum near the CI(G)Se-substrate interface. The observations may be indicative of an interstitial-substitutional diffusion mechanism.
REFERENCES
- 1. W. Witte, D. Hariskos, and M. Powalla, Thin solid Films 519, 7549 (2011). https://doi.org/10.1016/j.tsf.2010.12.127 , Google ScholarCrossref, CAS
- 2. M. Sugiyama, A. Kinoshita, A. Miyama, H. Nakanishi, and S.F. Chichibu, J. Cryst. Growth 310, 794 (2008). https://doi.org/10.1016/j.jcrysgro.2007.11.172 , , Google ScholarCrossref, CAS
- 3. S. Nishiwaki, T. Satoh, Y. Hashimoto, S.-I. Shimikawa, S. Hayashi, T. Negami, and T. Wada, Sol. Energy Mater. Sol. Cells 77, 359 (2003). https://doi.org/10.1016/S0927-0248(02)00355-0 , , Google ScholarCrossref, CAS
- 4. M. Benabdeslem, N. Benslim, L. Bechiri, L. Mahdjoubi, E. B. Hannech, and G. Nouet, J. Cryst. Growth 274, 144 (2005). https://doi.org/10.1016/j.jcrysgro.2004.09.085 , , Google ScholarCrossref, CAS
- 5. G. Voorwinden, P. Jackson, and R. Kniese, in Proceedings of 22nd European Photovoltaic Solar Energy Conference, Vol. II, edited by G. Willeke, H. Ossenbrink, and P. Helm (WIP-Munich, 2007), p. 2115. , Google Scholar
- 6. N. Rega, S. Siebentritt, I. Beckers, J. Beckmann, J. Albert, and M. Lux-Steiner, J. Cryst. Growth 248, 169 (2003). https://doi.org/10.1016/S0022-0248(02)01874-2 , Google ScholarCrossref, CAS
- 7. S. Siebentritt, N. Papathanasiou, J. Albert, and M. Ch. Lux-Steiner, Appl. Phys. Lett. 88, 151919 (2006). https://doi.org/10.1063/1.2192638 , , Google ScholarScitation
- 8. N. A. Stolwijk, Sh. Obeidi, J. Bastek, R. Wuerz, and A. Eicke, Appl. Phys. Lett. 96, 244101 (2010). https://doi.org/10.1063/1.3449125 , , Google ScholarScitation
- 9. K. Hiepko, J. Bastek, R. Schlesiger, G. Schmitz, R. Wuerz, and N. A. Stolwijk, Appl. Phys. Lett. 99, 234101 (2011). https://doi.org/10.1063/1.3665036 , , Google ScholarScitation
- 10. D. J. Schroeder, G. D. Berry, and A. A. Rockett, Appl. Phys. Lett. 69, 4068 (1996). https://doi.org/10.1063/1.117820 , , Google ScholarScitation, CAS
- 11. T. Maeda and T. Wada, in EMRS Spring Meeting, Strasbourg, France, 2012. , Google Scholar
- 12. S. B. Zhang, S.-H. Wei, A. Zunger, and H. Katayama-Yoshida, Phys. Rev. B 57, 9642 (1998). https://doi.org/10.1103/PhysRevB.57.9642 , Google ScholarCrossref, CAS
- 13. I. E. Oikkonen, M. G. Ganchenkova, A. P. Seitsonen, and R. M. Nieminen, J. Phys.: Condens. Matter 23, 422202 (2011). https://doi.org/10.1088/0953-8984/23/42/422202 , , Google ScholarCrossref, CAS
- 14. U. Gösele and T. Y. Tan, in Electronic Structure and Properties of Semiconductors, edited by W. Schröter (VCH, Weinheim, 1991), p. 97. , Google Scholar
- 15. A. Giese, N. A. Stolwijk, and H. Bracht, Appl. Phys. Lett. 77, 642 (2000). https://doi.org/10.1063/1.127071 , Google ScholarScitation, CAS
- 16. N. A. Stolwijk and L. Lerner, J. Appl. Phys. 110, 033526 (2011). https://doi.org/10.1063/1.3609070 , , Google ScholarScitation
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