Abstract
This work reports on up to 2.9 μm lasing at 230 K of InP-based type-I quantum well lasers. This record long wavelength lasing is achieved by applying InP-based Sb-free structures with eight periods of strain-compensated InAs quantum wells grown on metamorphic In0.8Al0.2As template layers. The continuous-wave threshold current density is 797 A/cm2 and the idealized extrapolated threshold current density for infinite cavity length is as low as 58 A/cm2 per quantum well at 120 K. This scheme is a promising pathway for extending the wavelength range of type-I quantum well lasers on InP substrates.
The authors wish to acknowledge the support of the National Basic Research Program of China under Grant Nos. 2012CB619202 and 2014CB643900, the National Natural Science Foundation of China under Grant Nos. 61275113, 61204133, 61334004, and 61405232.
