ABSTRACT
Atomic resolution transmission electron microscopy is performed to examine the strain distribution in an InAs/InAs1−xSbx superlattice grown on a (100)-GaSb substrate. The strain profiles reveal that the thickness of tensile regions in the superlattice is significantly lower than expected, with a corresponding increase in thickness of the compressive regions. Furthermore, significant grading is observed within the tensile regions of the strain profile, indicating Sb intermixing from the InAsSb growth surface. The results signify an effective reduction in the InAs layer thickness due to the anion (As-Sb) exchange process at the InAs-on-InAsSb interface.
This research was sponsored by the Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, under Air Force contract FA8650-08-D-5200. The superlattice sample was grown by IQE, Inc.
