Abstract
Here, we present direct correlation of luminescence properties to the atomic structures of Sialon:Ce phosphors. Luminescence of β-Sialon is revealed attributed to the intergrowth of a unit layer of α-Sialon:Ce-type structure on β-grain surfaces. The dense doping at fault sites either on the surface of or inside the α-Sialon crystallites might lead to intensified emission of light depending on the fault morphology. It seems that concentration quenching would not appear for Sialon:Ce phosphors unless high density of dislocations is created upon dense doping. Finally, structural evolution has been discussed aiming to greatly enhance the luminescence of Sialon phosphors.
We acknowledge the support from the 973 programs (Grant Nos. 2007CB936704 and 2009CB939904), the Natural Science Foundation of China (Grant Nos. 51272270 and 60936001), and the SICCAS Innovation Program.
