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Published Online: 16 February 2007
Accepted: January 2007
Appl. Phys. Lett. 90, 072109 (2007); https://doi.org/10.1063/1.2591415
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  • a)Also at Graduate School of Chinese Academy of Sciences, Beijing 100039, People’s Republic of China.

    b)Author to whom correspondence should be addressed; electronic mail: [email protected]

A series of Zn-doped CuAlS2 bulk samples was synthesized by spark plasma sintering, and the CuAl0.90Zn0.10S2 film was prepared on a glass substrate by channel spark ablation. Their electrical and optical properties were carefully investigated. A sharp increase in conductivity due to the enhancement of both Hall mobility and carrier concentration was observed with the introduction of Zn. p-type conduction was confirmed by both the positive Seebeck coefficient and Hall coefficient. The conductivity of the thin film is as high as 63.5Scm1 at room temperature, and the average transmittance in the visible region is above 80%.
The authors are indebted to I-Wei Chen at the University of Pennsylvania for helpful discussion. Financial support from NSF of China (Grant No. 20471068) is acknowledged.

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