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No Access Submitted: 01 November 1983 Accepted: 29 November 1983 Published Online: 04 June 1998

  • New model for slow current drift in InP metal‐insulator‐semiconductor field‐effect transistors

Appl. Phys. Lett. 44, 453 (1984); https://doi.org/10.1063/1.94764
S. M. Goodnick, T. Hwang, and C. W. Wilmsen
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  • Department of Electrical Engineering, Colorado State University, Ft. Collins, Colorado 80523
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  • S. M. Goodnick
  • T. Hwang
  • C. W. Wilmsen
ABSTRACT
The drift in channel current of SiO2/InP metal‐insulator‐semiconductor field‐effect transistors has been calculated using a model in which electrons thermionically tunnel to a conducting layer of In2O3 within the native oxide at the interface. Calculations based on this model using reasonable values for the interface parameters are in good agreement with experimental data. The model differs from previous drift models in that trapping occurs between bulklike materials and not through discrete trap levels and is based on physical evidence for the structure of the SiO2/InP interface.

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  1. © 1984 American Institute of Physics.

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