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Published Online: 26 October 2016
Accepted: October 2016

Tunneling electroresistance of MgZnO-based tunnel junctions

Appl. Phys. Lett. 109, 173507 (2016); https://doi.org/10.1063/1.4966180
Mohamed Belmoubarik1, a), Muftah Al-Mahdawi1, Masao Obata2, Daiki Yoshikawa2, Hideyuki Sato1, Tomohiro Nozaki1, Tatsuki Oda2,3, and Masashi Sahashi1
more...View Affiliations
  • 1Department of Electronic Engineering, Tohoku University, Sendai 980-8579, Japan
  • 2Graduate School of Natural Science and Technology, Kanazawa University, Kanazawa 920-1192, Japan
  • 3Institute of Science and Engineering, Kanazawa University, Kanazawa 920-1192, Japan

  • a)Electronic mail: . Current address: National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047, Japan.

Abstract
We investigated the tunneling electroresistance (TER) in metal/wurtzite-MgZnO/metal junctions for applications in nonvolatile random-access memories. A resistive switching was detected utilizing an electric-field cooling at ±1 V and exhibited a TER ratio of 360%–490% at 2 K. The extracted change in the average barrier height between the two resistance states gave an estimation of the MgZnO electric polarization at 2.5 μC/cm2 for the low-temperature limit. In addition, the temperature-dependent TER ratio and the shift of the localized states energies at the barrier interface supported the ferroelectric behavior of the MgZnO tunnel-barrier. From the first-principles calculations, we found a similar effect of the barrier height change coming from the reversal of ZnO electric polarization. The possibility of using metal electrodes and lower growth temperatures, in addition to the ferroelectric property, make the ZnO-based memory devices suitable for CMOS integration.

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