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Published Online: 19 July 2016
Accepted: July 2016

In-plane magnetic field effect on switching voltage and thermal stability in electric-field-controlled perpendicular magnetic tunnel junctions

AIP Advances 6, 075014 (2016); https://doi.org/10.1063/1.4959593
C. Grezes1, a),b), A. Rojas Rozas1, a), F. Ebrahimi1,2, J. G. Alzate1, X. Cai1, J. A. Katine3, J. Langer4, B. Ocker4, P. Khalili Amiri1,2, and K. L. Wang1
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Abstract
The effect of in-plane magnetic field on switching voltage (Vsw) and thermal stability factor (Δ) are investigated in electric-field-controlled perpendicular magnetic tunnel junctions (p-MTJs). Dwell time measurements are used to determine the voltage dependence of the energy barrier height for various in-plane magnetic fields (Hin), and gain insight into the Hin dependent energy landscape. We find that both Vsw and Δ decrease with increasing Hin, with a dominant linear dependence. The results are reproduced by calculations based on a macrospin model while accounting for the modified magnetization configuration in the presence of an external magnetic field.
This work was partially supported by the National Science Foundation Nanosystems Engineering Research Center for Translational Applications of Nanoscale Multiferroic Systems (TANMS). The work at Inston Inc. was supported in part by a Phase II NSF Small Business Innovation Research award. We would also like to acknowledge the collaboration of this research with King Abdul-Aziz City for Science and Technology (KACST) via The Center of Excellence for Green Nanotechnologies (CEGN). The authors would like to thank the members of the UCLA Device Research Laboratory, TANMS, CEGN and Inston Inc. for fruitful discussions.

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