No Access Published Online: 17 February 2015
AIP Conference Proceedings 1618, 60 (2014); https://doi.org/10.1063/1.4897674
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  • National Institute for Materials Physics, 105bis Atomistilor Street, 077125 Magurele, Romania
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  • Magdalena Lidia Ciurea
  • Sorina Lazanu
Multi-quantum well structures and Si wafers implanted with heavy iodine and bismuth ions are studied in order to evaluate the influence of stress on the parameters of trapping centers. The experimental method of thermostimullatedcurrents without applied bias is used, and the trapping centers are filled by illumination. By modeling the discharge curves, we found in multilayered structures the parameters of both 'normal' traps and 'stress-induced' ones, the last having a Gaussian-shaped temperature dependence of the cross section. The stress field due to the presence of stopped heavy ions implanted into Si was modeled by a permanent electric field. The increase of the strain from the neighborhood of I ions to the neighborhood of Bi ions produces the broadening of some energy levels and also a temperature dependence of the cross sections for all levels.
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