An in-depth noise model for giant magnetoresistance current sensors for circuit design and complementary metal–oxide–semiconductor integration

A.  Roldán; J. B.  Roldán; C.  Reig; S.  Cardoso; F.  Cardoso; R.  Ferreira; P. P.  Freitas

doi:10.1063/1.4865771

Abstract

Full instrumentation bridges based on spin valve of giant magnetoresistance and magnetic tunnel junction devices have been microfabricated and experimentally characterized from the DC and noise viewpoint. A more realistic model of these devices was obtained in this work, an electrical and thermal model previously developed have been improved in such a way that noise effects are also included. We have implemented the model in a circuit simulator and reproduced the experimental measurements accurately. This provides a more realistic and complete tool for circuit design where magnetoresistive elements are combined with well-known complementary metal–oxide–semiconductor modules.

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