Tunnel magnetocapacitance (TMC) in magnetic tunnel junctions (MTJs) has recently attracted interest due to unique properties, such as large magnetic response, thermal stability, and robustness to the bias voltage. In this Letter, we report the sign inversion phenomenon of TMC observed with frequency modulation and dc voltage application to MgO-based MTJs at room temperature. A negative TMC is observed in the frequency region of about kHz due to the appearance of spin capacitance. By applying a dc voltage (a few hundred mV) in this frequency region, the spin flip is promoted in the parallel configuration of MTJs. This results in the observation of the sign inversion of TMC from negative to positive. These physical pictures can be well explained by the calculation based on the modified Debye-Fröhlich model. Our research offers a deeper understanding of AC spin transports, DC spin accumulation, equilibrium and non-equilibrium spin dynamics.
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3 May 2021
Research Article|
May 04 2021
Sign inversion phenomenon of voltage-induced tunnel magnetocapacitance
Takeru Nakagawa;
Takeru Nakagawa
1
Faculty of Science and Technology, Keio University
, Yokohama, Kanagawa 223-8522, Japan
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Kentaro Ogata;
Kentaro Ogata
1
Faculty of Science and Technology, Keio University
, Yokohama, Kanagawa 223-8522, Japan
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Yusuke Nakayama;
Yusuke Nakayama
1
Faculty of Science and Technology, Keio University
, Yokohama, Kanagawa 223-8522, Japan
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Gang Xiao
;
Gang Xiao
2
Department of Physics, Brown University
, Providence, Rhode Island 02912, USA
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Hideo Kaiju
Hideo Kaiju
a)
1
Faculty of Science and Technology, Keio University
, Yokohama, Kanagawa 223-8522, Japan
3
Center for Spintronics Research Network, Keio University
, Yokohama, Kanagawa 223-8522, Japan
a)Author to whom correspondence should be addressed: kaiju@appi.keio.ac.jp
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a)Author to whom correspondence should be addressed: kaiju@appi.keio.ac.jp
Appl. Phys. Lett. 118, 182403 (2021)
Article history
Received:
March 14 2021
Accepted:
April 16 2021
Citation
Takeru Nakagawa, Kentaro Ogata, Yusuke Nakayama, Gang Xiao, Hideo Kaiju; Sign inversion phenomenon of voltage-induced tunnel magnetocapacitance. Appl. Phys. Lett. 3 May 2021; 118 (18): 182403. https://doi.org/10.1063/5.0050304
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