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Published Online: 17 August 2020
Accepted: July 2020

Influence of grain boundaries on the properties of polycrystalline germanium

Journal of Applied Physics 128, 075301 (2020); https://doi.org/10.1063/5.0006469
T. Imajo1,a),b), T. Suemasu1, and K. Toko1,2,b)
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ABSTRACT
High-speed thin film transistors based on plastic substrates are indispensable to realize next-generation flexible devices. Here, we synthesized a polycrystalline Ge layer, which had the highest quality ever, on GeO2-coated substrates using advanced solid-phase crystallization at 375 °C. X-ray diffraction and Raman spectroscopy revealed that Ge on plastic had a compressive strain, while conventional Ge with a glass substrate had a tensile strain. This behavior was explained quantitatively from the difference in the thermal expansion coefficients between Ge and the substrate. Electron backscatter diffraction analyses showed that the Ge had large grains up to 10 μm, while many intragranular grain boundaries were present. The potential barrier height of the grain boundary was lower for the plastic sample than that for the glass sample, which was discussed in terms of the strain direction. These features resulted in a hole mobility (500 cm2/V s) exceeding that of a single-crystal Si wafer. The findings and knowledge will contribute to the development of polycrystalline engineering and lead to advanced flexible electronics.

ACKNOWLEDGMENTS

This work was financially supported by a Grants-in-Aid for JSPS Research Fellow (No. 19J21034) and the JST PRESTO (No. JPMJPR17R7). The authors are grateful to Professor T. Sakurai (University of Tsukuba) for his assistance with the Hall effect measurement. Some experiments were conducted at the International Center for Young Scientists in NIMS.

REFERENCES
Section:
Previous section

  1. 1. K. Saraswat, C. O. Chui, T. Krishnamohan, D. Kim, A. Nayfeh, and A. Pethe, Mater. Sci. Eng. B 135, 242 (2006). https://doi.org/10.1016/j.mseb.2006.08.014, Google ScholarCrossref
  2. 2. D. P. Brunco, B. De Jaeger, G. Eneman, J. Mitard, G. Hellings, A. Satta, V. Terzieva, L. Souriau, F. E. Leys, G. Pourtois, M. Houssa, G. Winderickx, E. Vrancken, S. Sioncke, K. Opsomer, G. Nicholas, M. Caymax, A. Stesmans, J. Van Steenbergen, P. W. Mertens, M. Meuris, and M. M. Heyns, J. Electrochem. Soc. 155, H552 (2008). https://doi.org/10.1149/1.2919115, Google ScholarCrossref
  3. 3. R. Pillarisetty, Nature 479, 324 (2011). https://doi.org/10.1038/nature10678, Google ScholarCrossref
  4. 4. K. Yamamoto, T. Sada, D. Wang, and H. Nakashima, Appl. Phys. Lett. 103, 122106 (2013). https://doi.org/10.1063/1.4821546, Google ScholarScitation, ISI
  5. 5. S. Takagi, R. Zhang, J. Suh, S.-H. Kim, M. Yokoyama, K. Nishi, and M. Takenaka, Jpn. J. Appl. Phys. 54, 06FA01 (2015). https://doi.org/10.7567/JJAP.54.06FA01, Google ScholarCrossref
  6. 6. A. Toriumi and T. Nishimura, Jpn. J. Appl. Phys. 57, 010101 (2018). https://doi.org/10.7567/JJAP.57.010101, Google ScholarCrossref
  7. 7. G. Taraschi, A. J. Pitera, and E. A. Fitzgerald, Solid State Electron. 48, 1297 (2004). https://doi.org/10.1016/j.sse.2004.01.012, Google ScholarCrossref
  8. 8. Y. Moriyama, K. Ikeda, Y. Kamimuta, M. Oda, T. Irisawa, Y. Nakamura, A. Sakai, and T. Tezuka, Solid State Electron. 83, 42 (2013). https://doi.org/10.1016/j.sse.2013.01.036, Google ScholarCrossref
  9. 9. K. Yu, F. Yang, H. Cong, L. Zhou, Q. Liu, L. Zhang, B. Cheng, C. Xue, Y. Zuo, and C. Li, J. Alloys Compd. 750, 182 (2018). https://doi.org/10.1016/j.jallcom.2018.02.178, Google ScholarCrossref
  10. 10. T. Maeda, K. Ikeda, S. Nakaharai, T. Tezuka, N. Sugiyama, Y. Moriyama, and S. Takagi, Thin Solid Films 508, 346 (2006). https://doi.org/10.1016/j.tsf.2005.07.339, Google ScholarCrossref
  11. 11. J. Feng, G. Thareja, M. Kobayashi, S. Chen, A. Poon, Y. Bai, P. B. Griffin, S. S. Wong, Y. Nishi, and J. D. Plummer, IEEE Electron Device Lett. 29, 805 (2008). https://doi.org/10.1109/LED.2008.2000613, Google ScholarCrossref
  12. 12. S. Hu, P. W. Leu, A. F. Marshall, and P. C. McIntyre, Nat. Nanotechnol. 4, 649 (2009). https://doi.org/10.1038/nnano.2009.233, Google ScholarCrossref
  13. 13. K. Toko, Y. Ohta, T. Tanaka, T. Sadoh, and M. Miyao, Appl. Phys. Lett. 99, 032103 (2011). https://doi.org/10.1063/1.3611904, Google ScholarScitation, ISI
  14. 14. T. Hosoi, Y. Suzuki, T. Shimura, and H. Watanabe, Appl. Phys. Lett. 105, 173502 (2014). https://doi.org/10.1063/1.4900442, Google ScholarScitation, ISI
  15. 15. K. Usuda, Y. Kamata, Y. Kamimuta, T. Mori, M. Koike, and T. Tezuka, Appl. Phys. Express 7, 056501 (2014). https://doi.org/10.7567/APEX.7.056501, Google ScholarCrossref
  16. 16. Y. Kamata, M. Koike, E. Kurosawa, M. Kurosawa, H. Ota, O. Nakatsuka, S. Zaima, and T. Tezuka, Appl. Phys. Express 7, 121302 (2014). https://doi.org/10.7567/APEX.7.121302, Google ScholarCrossref
  17. 17. O. Nakatsuka, N. Tsutsui, Y. Shimura, S. Takeuchi, A. Sakai, and S. Zaima, Jpn. J. Appl. Phys. 49, 04DA10 (2010). https://doi.org/10.1143/JJAP.49.04DA10, Google ScholarCrossref
  18. 18. K. Toko, I. Nakao, T. Sadoh, T. Noguchi, and M. Miyao, Solid State Electron. 53, 1159 (2009). https://doi.org/10.1016/j.sse.2009.08.002, Google ScholarCrossref
  19. 19. M. Tada, J.-H. Park, D. Kuzum, G. Thareja, J. R. Jain, Y. Nishi, and K. C. Saraswat, J. Electrochem. Soc. 157, H371 (2010). https://doi.org/10.1149/1.3295703, Google ScholarCrossref
  20. 20. C.-Y. Tsao, J. Huang, X. Hao, P. Campbell, and M. A. Green, Sol. Energy Mater. Sol. Cells 95, 981 (2011). https://doi.org/10.1016/j.solmat.2010.12.003, Google ScholarCrossref
  21. 21. H.-W. Jung, W.-S. Jung, H.-Y. Yu, and J.-H. Park, J. Alloys Compd. 561, 231 (2013). https://doi.org/10.1016/j.jallcom.2013.02.023, Google ScholarCrossref
  22. 22. J.-H. Park, K. Kasahara, K. Hamaya, M. Miyao, and T. Sadoh, Appl. Phys. Lett. 104, 252110 (2014). https://doi.org/10.1063/1.4885716, Google ScholarScitation, ISI
  23. 23. M. Kurosawa, N. Taoka, H. Ikenoue, O. Nakatsuka, and S. Zaima, Appl. Phys. Lett. 104, 061901 (2014). https://doi.org/10.1063/1.4864627, Google ScholarScitation, ISI
  24. 24. K. Toko, R. Numata, N. Oya, N. Fukata, N. Usami, and T. Suemasu, Appl. Phys. Lett. 104, 022106 (2014). https://doi.org/10.1063/1.4861890, Google ScholarScitation, ISI
  25. 25. Z. Wang, L. P. H. Jeurgens, W. Sigle, and E. J. Mittemeijer, Phys. Rev. Lett. 115, 016102 (2015). https://doi.org/10.1103/PhysRevLett.115.016102, Google ScholarCrossref
  26. 26. R. Matsumura, H. Chikita, Y. Kai, T. Sadoh, H. Ikenoue, and M. Miyao, Appl. Phys. Lett. 107, 262106 (2015). https://doi.org/10.1063/1.4939109, Google ScholarScitation, ISI
  27. 27. W. Takeuchi, N. Taoka, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima, Appl. Phys. Lett. 107, 022103 (2015). https://doi.org/10.1063/1.4926507, Google ScholarScitation, ISI
  28. 28. C. Xu, X. Gong, M. Miyao, and T. Sadoh, Appl. Phys. Lett. 115, 042101 (2019). https://doi.org/10.1063/1.5096798, Google ScholarScitation, ISI
  29. 29. T. Sadoh, H. Kamizuru, A. Kenjo, and M. Miyao, Appl. Phys. Lett. 89, 192114 (2006). https://doi.org/10.1063/1.2387136, Google ScholarScitation, ISI
  30. 30. S. Kabuyanagi, T. Nishimura, K. Nagashio, and A. Toriumi, Thin Solid Films 557, 334 (2014). https://doi.org/10.1016/j.tsf.2013.11.133, Google ScholarCrossref
  31. 31. A. Hara, Y. Nishimura, and H. Ohsawa, Jpn. J. Appl. Phys. 56, 03BB01 (2017). https://doi.org/10.7567/JJAP.56.03BB01, Google ScholarCrossref
  32. 32. H. A. Kasirajan, W.-H. Huang, M.-H. Kao, H.-H. Wang, J.-M. Shieh, F.-M. Pan, and C.-H. Shen, Appl. Phys. Express 11, 101305 (2018). https://doi.org/10.7567/APEX.11.101305, Google ScholarCrossref
  33. 33. M. Asadirad, Y. Gao, P. Dutta, S. Shervin, S. Sun, S. Ravipati, S. H. Kim, Y. Yao, K. H. Lee, A. P. Litvinchuk, V. Selvamanickam, and J.-H. Ryou, Adv. Electron. Mater. 2, 1600041 (2016). https://doi.org/10.1002/aelm.201600041, Google ScholarCrossref
  34. 34. B. Hekmatshoar, S. Mohajerzadeh, D. Shahrjerdi, and M. D. Robertson, Appl. Phys. Lett. 85, 1054 (2004). https://doi.org/10.1063/1.1779946, Google ScholarScitation, ISI
  35. 35. K. Kasahara, Y. Nagatomi, K. Yamamoto, H. Higashi, M. Nakano, S. Yamada, D. Wang, H. Nakashima, and K. Hamaya, Appl. Phys. Lett. 107, 142102 (2015). https://doi.org/10.1063/1.4932376, Google ScholarScitation, ISI
  36. 36. T. Suzuki, B. M. Joseph, M. Fukai, M. Kamiko, and K. Kyuno, Appl. Phys. Express 10, 095502 (2017). https://doi.org/10.7567/APEX.10.095502, Google ScholarCrossref
  37. 37. H. Higashi, K. Kudo, K. Yamamoto, S. Yamada, T. Kanashima, I. Tsunoda, H. Nakashima, and K. Hamaya, J. Appl. Phys. 123, 215704 (2018). https://doi.org/10.1063/1.5031469, Google ScholarScitation, ISI
  38. 38. H. Haesslein, R. Sielemann, and C. Zistl, Phys. Rev. Lett. 80, 2626 (1998). https://doi.org/10.1103/PhysRevLett.80.2626, Google ScholarCrossref
  39. 39. K. Toko, R. Yoshimine, K. Moto, and T. Suemasu, Sci. Rep. 7, 16981 (2017). https://doi.org/10.1038/s41598-017-17273-6, Google ScholarCrossref
  40. 40. D. Takahara, K. Moto, T. Imajo, T. Suemasu, and K. Toko, Appl. Phys. Lett. 114, 082105 (2019). https://doi.org/10.1063/1.5084191, Google ScholarScitation, ISI
  41. 41. M. Saito, K. Moto, T. Nishida, T. Suemasu, and K. Toko, Sci. Rep. 9, 16558 (2019). https://doi.org/10.1038/s41598-019-53084-7, Google ScholarCrossref
  42. 42. K. Moto, K. Yamamoto, T. Imajo, T. Suemasu, H. Nakashima, and K. Toko, Appl. Phys. Lett. 114, 212107 (2019). https://doi.org/10.1063/1.5093952, Google ScholarScitation, ISI
  43. 43. R. Yoshimine, K. Moto, T. Suemasu, and K. Toko, Appl. Phys. Express 11, 031302 (2018). https://doi.org/10.7567/APEX.11.031302, Google ScholarCrossref
  44. 44. T. Imajo, K. Moto, R. Yoshimine, T. Suemasu, and K. Toko, Appl. Phys. Express 12, 015508 (2019). https://doi.org/10.7567/1882-0786/aaf5c6, Google ScholarCrossref
  45. 45. H. Chen, Y. K. Li, C. S. Peng, H. F. Liu, Y. L. Liu, Q. Huang, J. M. Zhou, and Q.-K. Xue, Phys. Rev. B 65, 233303 (2002). https://doi.org/10.1103/PhysRevB.65.233303, Google ScholarCrossref
  46. 46. S. A. Lyon, R. J. Nemanich, N. M. Johnson, and D. K. Biegelsen, Appl. Phys. Lett. 40, 316 (1982). https://doi.org/10.1063/1.93075, Google ScholarScitation, ISI
  47. 47. P. Lengsfeld, N. H. Nickel, C. Genzel, and W. Fuhs, J. Appl. Phys. 91, 9128 (2002). https://doi.org/10.1063/1.1476083, Google ScholarScitation, ISI
  48. 48. S. Wolf and R. N. Taubner, Silicon Processing for the VLSI Era: Process Technology (Lattice, Sunset Beach, CA, 1986), Vol. I. Google Scholar
  49. 49. K. Toko, H. Kanno, A. Kenjo, T. Sadoh, T. Asano, and M. Miyao, Appl. Phys. Lett. 91, 042111 (2007). https://doi.org/10.1063/1.2764447, Google ScholarScitation, ISI
  50. 50. K. Toko, T. Sadoh, and M. Miyao, Appl. Phys. Lett. 94, 192106 (2009). https://doi.org/10.1063/1.3136857, Google ScholarScitation, ISI
  51. 51. J. Y. W. Seto, J. Appl. Phys. 46, 5247 (1975). https://doi.org/10.1063/1.321593, Google ScholarScitation, ISI
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