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Published Online: 02 April 2020
Accepted: March 2020

Structural effects on carrier doping in carbon nanotube thin-film transistors

Journal of Applied Physics 127, 134301 (2020); https://doi.org/10.1063/5.0004886
Yanlin Gaoa) and Susumu Okadab)
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ABSTRACT
Based on density functional theory, we studied the electronic properties of carbon nanotube (CNT) thin films under an external electric field. The carrier accumulation resulting from an electric field depends slightly on the CNT species that form the thin films and their arrangement with respect to the electrode. Although most of the carriers are accumulated in the CNTs located at the electrode side, wave function hybridization between semiconducting CNTs slightly enhances the carrier penetration into the opposite CNT layer. Metallic CNTs strongly depress or enhance the carrier penetration for the thin films when they are located at the electrode side or not, respectively.

ACKNOWLEDGMENTS

This work was supported by the JST-CREST under Grant Nos. JPMJCR1532 and JPMJCR1715; the Japan Science and Technology Agency JSPS KAKENHI under Grant Nos. JP17H01069, JP16H00898, and JP16H06331; the Japan Society for the Promotion of Science; and the Joint Research Program on Zero-Emission Energy Research, Institute of Advanced Energy, Kyoto University. Part of the calculations was performed on an NEC SX-Ace at the Cybermedia Center at Osaka University and on an SGI ICE XA/UV at the Institute of Solid State Physics, The University of Tokyo.
The data that support the findings of this study are available from the corresponding author upon reasonable request.

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