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No Access Submitted: 14 January 1985 Accepted: 18 February 1985 Published Online: 04 June 1998

  • Structure of the InP/SiO2 interface

Appl. Phys. Lett. 46, 889 (1985); https://doi.org/10.1063/1.95877
Z. Liliental and O. L. Krivanek
  • Center for Solid State Science and the Department of Physics, Arizona State University, Tempe, Arizona 85287
    • J. F. Wager
  • Department of Electrical and Computer Engineering, Oregon State University, Corvallis, Oregon 97331
    • S. M. Goodnick
  • Department of Electrical Engineering, Colorado State University, Fort Collins, Colorado 80523
    • more...View Contributors
    • Z. Liliental
    • O. L. Krivanek
    • J. F. Wager
    • S. M. Goodnick
    ABSTRACT
    InP/SiO2 interfaces have been studied by high resolution electron microscopy in cross section, by ellipsometry, and by x‐ray photoelectron spectroscopy. The roughness of the interface is shown to vary from 10 to 100 Å peak to peak depending on the InP surface treatment prior to SiO2 desposition, and some evidence is found for a small amount of native oxide and P segregation at the interface. Thermal oxide grown on InP at 350 °C is shown to consist of two separate layers, an inner one of 30–70 Å thickness and probably composition InPO4, and an outer one of 60‐Å thickness and probably composition In2O3.

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    1. © 1985 American Institute of Physics.

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