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Published Online: 28 August 2008
Appl. Phys. Lett. 28, 499 (1976); https://doi.org/10.1063/1.88831
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The growth and operation of lattice‐matched double‐heterostructure InP/Ga0.17In0.83As0.34P0.66/InP light‐emitting diodes is reported. These diodes have an emission wavelength of 1.1 μm and quantum efficiencies of 4%.
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