ABSTRACT
The growth and operation of lattice‐matched double‐heterostructure InP/Ga0.17In0.83As0.34P0.66/InP light‐emitting diodes is reported. These diodes have an emission wavelength of 1.1 μm and quantum efficiencies of 4%.
- 1. D. N. Payne and W. A. Gambling, Electron. Lett. 11, 176 (1975). Google ScholarCrossref
- 2. C. J. Nuese and R. E. Enstrom, IEEE Trans. Electron. Devices ED‐17, 1067 (1972). Google ScholarCrossref
- 3. J. L. Shay, K. J. Bachmann, and E. Buehler, Appl. Phys. Lett. 24, 192 (1974). Google ScholarScitation
- 4. B. E. Nahory, M. A. Pollack, E. D. Beebe, and J. C. DeWinter, Appl. Phys. Lett. 27, 356 (1975). Google ScholarScitation
- 5. R. L. Hartman and A. R. Hartman, Appl. Phys. Lett. 23, 147 (1975). Google ScholarScitation
- 6. G. A. Antypas, R. L. Moon, L. W. James, J. Edgecumbe, and R. L. Bell, 1972 Symposium on GaAs and Related Compounds (Institute of Physics, London, 1973), pp. 48–54. Google Scholar
- 7. III–V Ternary Semiconducting Compounds—Data Tables, edited by M. Neuberger (IFI/Plenum, New York, 1972). Google Scholar
- 8. A. P. Bogatov, L. M. Dalginov, L. V. Druzhinina, P. G. Eliseev, B. N. Sverdlov, and E. G. Sheuchenko, Sov. J. Quantum Electron. 4, 1281 (1975). Google ScholarCrossref
- 9. J. J. Hsieh, Appl. Phys. Lett. 28, 283 (1976). Google ScholarScitation
- © 1976 American Institute of Physics.
Please Note: The number of views represents the full text views from December 2016 to date. Article views prior to December 2016 are not included.

