Polarization-resolved micro-photoluminescence investigation of InGaN/GaN core-shell microrods

We investigate the optical emission properties of the active InGaN shell of high aspect-ratio InGaN/GaN core-shell microrods (μRods) by confocal quasi-resonant polarization-resolved and excitation density dependent micro-photoluminescence (μPL). The active shell, multiple thin InGaN/GaN quantum wells (MQWs), was deposited on GaN μRods selectively grown by metal organic vapor phase epitaxy on patterned SiO₂/n-GaN/sapphire template. High spatial resolution mappings reveal a very homogeneous emission intensity along the whole μRods including the tip despite a red-shift of 30 nm from the base to the tip along the 8.6 μm-long m-plane sidewalls. Looking at the Fabry-Perot interference fringes superimposed on the μPL spectra, we get structural information on the μRods. A high degree of linear polarization (DLP) of 0.6–0.66 is measured on the lower half of the m-plane side facets with a slight decrease toward the tip. We observe the typical drop of the DLP with an excitation density caused by degenerate filling of valence bands (Fermi regime). Local internal quantum efficiencies (IQEs) of $55\pm 11\hspace{0.17em}\%$ up to $73\pm 7\hspace{0.17em}\%$ are estimated on the m-plane facet from measurements at low temperature. Finally, simultaneously fitting the DLP and IQE as a function of the excitation density, we determine the carrier density inside the active region and the recombination rate coefficients of the m-plane MQWs. We show that phase-space filling and the background carrier density have to be included in the recombination rate model.