ABSTRACT
We report a method to determine the radiative efficiency (ηrad) of GaN-based light-emitting diodes using excitation density and bias dependent room temperature photoluminescence (PL) measurements selectively exciting the active region. Considering carrier escape by tunnelling out of the active region, we extrapolate the generation rate of charge carriers from photocurrent measurements under reverse bias. A model describing the recombination of carriers including phase-space filling is then fitted to excitation density dependent PL data obtained under forward bias to extract ηrad. Results show that ηrad vs. carrier density is asymmetric around its maximum due to phase-space filling.
This work was supported by the Leistungszentrum Nachhaltigkeit Freiburg (project NaLuWiLeS) and the Cluster of Excellence BrainLinks-BrainTools (DFG, Grant No. EXC 1086). C.M. acknowledges Gwénolé J. Jacopin for fruitful discussions.
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