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Published Online: 21 September 2015
Accepted: September 2015

Vertical electric field induced suppression of fine structure splitting of excited state excitons in a single GaAs/AlGaAs island quantum dots

Appl. Phys. Lett. 107, 123102 (2015); https://doi.org/10.1063/1.4931360
Mohsen Ghali1,2, Yuzo Ohno1, and Hideo Ohno1
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  • 1Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan
  • 2Laboratory of Nanophotonics, Physics Department, Faculty of Science, Kafrelsheikh University, 33516 Kafrelsheikh, Egypt
ABSTRACT
We report experimentally on fine structure splitting (FSS) of various excitonic transitions in single GaAs island quantum dots, formed by a monolayer thickness fluctuation in the narrow GaAs/AlGaAs quantum well, and embedded in an n-i-Schottky diode device. By applying a forward vertical electric field (F) between the top metallic contact and the sample substrate, we observed an in-plane polarization rotation of both the ground and the excited state excitons with increasing the electric field. The polarization rotations were accompanied with a strong decrease in the FSS of the ground as well as the excited state excitons with the field, until the FSS vanished as F approached 30 kV/cm.
M.G gratefully appreciates collaboration with Prof. H. Talaat and financial support from Science and Technology Development Fund (STDF) in Egypt under Contract No. 4333, Young Research Grant, and Capacity Building Grant, Contract No. 4926. This work was supported in part by the Global COE (GCOE) Program at Tohoku University, Japan.

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