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Published Online: 24 August 2015
Accepted: July 2015

Growth condition dependence of photoluminescence polarization in (100) GaAs/AlGaAs quantum wells at room temperature

Journal of Applied Physics 118, 083901 (2015); https://doi.org/10.1063/1.4928325
Satoshi Iba1, Hidekazu Saito1, Ken Watanabe2, Yuzo Ohno2, and Shinji Yuasa1
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ABSTRACT
We conducted systematic measurements on the carrier lifetime (τc), spin relaxation time (τs), and circular polarization of photoluminescence (Pcirc) in (100) GaAs/AlGaAs multiple quantum wells grown by molecular beam epitaxy (MBE). The τc values are strongly affected by MBE growth conditions (0.4–9 ns), whereas the τs are almost constant at about 0.13 ns. The result suggests that spin detection efficiency [τs/(τc + τs)], which is expected to be proportional to a steady-state Pcirc, is largely dependent on growth condition. We confirmed that the Pcirc has similar dependence on growth condition to those of τs/(τc + τs) values. The study thus indicates that choosing the appropriate growth condition of the QW is indispensable for obtaining a high Pcirc from a spin-polarized light-emitting diode (spin-LED).

ACKNOWLEDGMENTS

This work was supported by Grant-in-Aid for Scientific Research on Innovative Area, “Nano Spin Conversion Science” (Grant Nos. 26103003 and 26103004), and Grant-in-Aid for Young Scientists (A) (Grant No. 26709027).

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