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Published Online: 23 June 2015
Accepted: June 2015

Epitaxial wurtzite-MgZnO barrier based magnetic tunnel junctions deposited on a metallic ferromagnetic electrode

Appl. Phys. Lett. 106, 252403 (2015); https://doi.org/10.1063/1.4923041
M. Belmoubarika), M. Al-Mahdawi, H. Sato, T. Nozaki, and M. Sahashi
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Abstract
An epitaxial wurtzite (WZ) Mg0.23Zn0.77O barrier based magnetic tunnel junction (MTJ), with electrode-barrier structure of Co0.30Pt0.70 (111)/Mg0.23Zn0.77O (0001)/Co (0001), was fabricated. The good crystallinity and tunneling properties were experimentally confirmed. Electrical and magnetic investigations demonstrated its high resistance-area product of 1.05 MΩ μm2, a maximum tunneling magneto-resistance (TMR) of 35.5%, and the existence of localized states within the tunneling barrier producing TMR rapid decrease and oscillation when increasing the applied bias voltage. The TMR value almost vanished at 200 K, which was attributed to the induced moment and strong spin-orbit coupling in Pt atoms at the Co0.30Pt0.70/Mg0.23Zn0.77O interface. Owing to the ferroelectric behavior in WZ-MgZnO materials, the fabrication of WZ-MgZnO barrier based MTJs deposited on a metallic ferromagnetic electrode will open routes for electrically controllable non-volatile devices that are compatible with CMOS technology.

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