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Published Online: 21 October 2014
Accepted: October 2014

Comparison of fluctuating potentials and donor-acceptor pair transitions in a Cu-poor Cu2ZnSnS4 based solar cell

Appl. Phys. Lett. 105, 163901 (2014); https://doi.org/10.1063/1.4899057
J. P. Teixeira1, R. A. Sousa1, M. G. Sousa1, A. F. da Cunha1, P. A. Fernandes1,2, P. M. P. Salomé3, J. C. González4, and J. P. Leitão1, a)
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  • Correction: Appl. Phys. Lett. 107, 049903 (2015)
    • Abstract
    The structure of the electronic energy levels of a single phase Cu2ZnSnS4 film, as confirmed by Raman Scattering and x-ray diffraction, is investigated through a dependence on the excitation power of the photoluminescence (PL). The behavior of the observed asymmetric band, with a peak energy at ∼1.22 eV, is compared with two theoretical models: (i) fluctuating potentials and (ii) donor-acceptor pair transitions. It is shown that the radiative recombination channels in the Cu-poor film are strongly influenced by tail states in the bandgap as a consequence of a heavy doping and compensation levels. The contribution of the PL for the evaluation of secondary phases is also highlighted.

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