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No Access Submitted: 19 May 2014 Accepted: 26 June 2014 Published Online: 10 July 2014

  • A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0.53Ga0.47As capacitor structures

Journal of Applied Physics 116, 024104 (2014); https://doi.org/10.1063/1.4887517
Jun Lin1, Lee Walsh2, Greg Hughes2, Joseph C. Woicik3, Ian M. Povey1, Terrance P. O'Regan4, and Paul K. Hurley1
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  • Jun Lin
  • Lee Walsh
  • Greg Hughes
  • Joseph C. Woicik
  • Ian M. Povey
  • Terrance P. O'Regan
  • Paul K. Hurley
ABSTRACT
Capacitance-Voltage (C-V) characterization and hard x-ray photoelectron spectroscopy (HAXPES) measurements have been used to study metal/Al2O3/In0.53Ga0.47As capacitor structures with high (Ni) and low (Al) work function metals. The HAXPES measurements observe a band bending occurring prior to metal deposition, which is attributed to a combination of fixed oxide charges and interface states of donor-type. Following metal deposition, the Fermi level positions at the Al2O3/In0.53Ga0.47As interface move towards the expected direction as observed from HAXPES measurements. The In0.53Ga0.47As surface Fermi level positions determined from both the C-V analysis at zero gate bias and HAXPES measurements are in reasonable agreement. The results are consistent with the presence of electrically active interface states at the Al2O3/In0.53Ga0.47As interface and suggest an interface state density increasing towards the In0.53Ga0.47As valence band edge.

ACKNOWLEDGMENTS

The authors from Tyndall National Institute and Dublin City University acknowledge Science Foundation Ireland for financial support of the research work through the INVENT Project (SFI/09/IN.1/I2633). The central fabrication facility at Tyndall is acknowledged for the fabrication of the experimental samples used in this work. Ian Povey from Tyndall is acknowledged for the ALD growth of the Al2O3 layers. Dan O'Connell from Tyndall is acknowledged for the metallisation. Patrick Carolan from Tyndall is acknowledged for the TEM analysis. Access to the X24A HAXPES beamline at Brookhaven National Laboratory was obtained through a General User Proposal. Use of the National Synchrotron Light Source, Brookhaven National Laboratory, was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-98CH10886.

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