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Published Online: 12 March 2014
Accepted: February 2014

Perfect alignment and preferential orientation of nitrogen-vacancy centers during chemical vapor deposition diamond growth on (111) surfaces

Appl. Phys. Lett. 104, 102407 (2014); https://doi.org/10.1063/1.4868128
Julia Michl1, a), Tokuyuki Teraji2, b), Sebastian Zaiser1, Ingmar Jakobi1, Gerald Waldherr1, Florian Dolde1, Philipp Neumann1, c), Marcus W. Doherty3, Neil B. Manson3, Junichi Isoya4, and Jörg Wrachtrup1
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ABSTRACT
Synthetic diamond production is a key to the development of quantum metrology and quantum information applications of diamond. The major quantum sensor and qubit candidate in diamond is the nitrogen-vacancy (NV) color center. This lattice defect comes in four different crystallographic orientations leading to an intrinsic inhomogeneity among NV centers, which is undesirable in some applications. Here, we report a microwave plasma-assisted chemical vapor deposition diamond growth technique on (111)-oriented substrates, which yields perfect alignment (94% ± 2%) of as-grown NV centers along a single crystallographic direction. In addition, clear evidence is found that the majority (74% ± 4%) of the aligned NV centers were formed by the nitrogen being first included in the (111) growth surface and then followed by the formation of a neighboring vacancy on top. The achieved homogeneity of the grown NV centers will tremendously benefit quantum information and metrology applications.
We thank I. Hartenbach for X-ray analysis and discussions as well as F. Jelezko for fruitful discussions. We acknowledge the financial support by DFG and JST (SFB-TR 21, FOR 1482), by the BMBF (CHIST-ERA), by EU (Diamant and SIQS) and ARC (No. DP120102232).

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