Published Online: 03 January 2014
Accepted: October 2013
Journal of Applied Physics 115, 17E501 (2014); https://doi.org/10.1063/1.4859036
We developed a highly sensitive magnetic tunnel junction (MTJ) based magnetic field sensor device with a magnetic field sensitivity of 1.29 Ω/μT. For this, more than 1000 microstructured linear MgO based MTJ pillars were fabricated and connected in series. By current biasing the MTJ sensor device under small AC external magnetic fields0HAC), a large AC output voltage proportional to μ0HAC is induced. Carrying out noise spectral density measurements at such conditions, we demonstrate that our MTJ sensor device is able to detect magnetic fields down to 115 pT/Hz0.5 at frequencies fAC < 200 Hz in an unshielded environment without amplification of the MTJ AC output voltage.
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