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Published Online: 03 July 2013
Accepted: June 2013

GaN doped with beryllium—An effective light converter for white light emitting diodes

Appl. Phys. Lett. 103, 011107 (2013); https://doi.org/10.1063/1.4812335
Henryk Teisseyre1,2, Michal Bockowski2, Izabella Grzegory2, Adrian Kozanecki1, Benjamin Damilano3, Yaroslav Zhydachevskii1, Michael Kunzer4, Katarzyna Holc4, and Ulrich T. Schwarz4
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ABSTRACT
So far, most of the studies on GaN doped with beryllium have mainly concentrated on possible p-type doping. Unfortunately, realization of p-type conductivity in such a way appeared to be very difficult. It seems, however, that bulk crystals doped with beryllium can be used as white light converters in the monolithic white light emitting diodes. To realize monolithic white light emitting diode, we used blue light emitting diodes and a single GaN:Be crystal as converter. High value of the Color Rendering Index gives hope for obtaining an effective light converter based on gallium nitride doped with beryllium.
This work was partially supported by project (DEC-2011/03/B/ST3/02647 of the Polish National Science Centre. The authors thank Dr. Sergey Yatsunenko for help in part of experimental measurements.

REFERENCES
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  1. 1. H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, Jpn. J. Appl. Phys. 28, L2112 (1989). https://doi.org/10.1143/JJAP.28.L2112 , Google ScholarCrossref
  2. 2. F. Bernardini, V. Fiorentini, and A. Bosin, Appl. Phys. Lett. 70, 2990 (1997). https://doi.org/10.1063/1.118766 , Google ScholarScitation, ISI
  3. 3. C. G. van de Walle, S. Limpijumnong, and J. Neugebauer, Phys. Rev. B. 63, 245205 (2001). https://doi.org/10.1103/PhysRevB.63.245205 , Google ScholarCrossref
  4. 4. F. J. Sanchez, F. Calle, M. A. Sanchez-Garcıa, E. Calleja, E. Munoz, C. H. Molloy, D. J. Somerford, J. J. Serrano, and J. M. Blanco, Semicond. Sci. Technol. 13, 1130 (1998). https://doi.org/10.1088/0268-1242/13/10/013 , Google ScholarCrossref
  5. 5. D. J. Dewsnip, A. V. Andrianov, I. Harrison, J. W. Orton, D. E. Lacklison, G. B. Rez, S. E. Hooper, T. S. Cheng, and C. T. Foxon, Semicond. Sci. Technol. 13, 500 (1998). https://doi.org/10.1088/0268-1242/13/5/010 , Google ScholarCrossref
  6. 6. R. Stępniewski, A. Wysmołek, K. P. Korona, and J. M. Baranowski, in III-Nitride Semiconductors: Optical Properties I, Optoelectronic Properties of Semiconductors and Superlattices, Vol. 13, edited by M. O. Manasreh and H. X. Jiang (Taylor & Francis Books, London, 2002), Ch. 5. Google Scholar
  7. 7. J. Neugebauer and C. G. van de Walle, J. Appl. Phys. 85, 3003 (1999). https://doi.org/10.1063/1.369619 , Google ScholarScitation, ISI
  8. 8. K. Saarinena, V. Ranki, T. Suski, M. Bockowski and I. Grzegory, J. Cryst. Growth 246, 281 (2002). https://doi.org/10.1016/S0022-0248(02)01752-9 , Google ScholarCrossref
  9. 9. C. D. Latham, R. M. Nieminen, C. J. Fall, R. Jones, S. Öberg, and P. R. Briddon, Phys. Rev. B. 67, 205206 (2003). https://doi.org/10.1103/PhysRevB.67.205206 , Google ScholarCrossref
  10. 10. B. Clerjaud, D. Cote, C. Naud, R. Bouanani-Rahbi, D. Wasik, K. Pakula, J. M. Baranowski, T. Suski, E. Litwin-Staszewska, M. Bockowski, I. Grzegory, Physica B, 308–310, 117 (2001). https://doi.org/10.1016/S0921-4526(01)00711-6 , Google ScholarCrossref
  11. 11. S. Lany and A. Zunger, Appl. Phys. Lett. 96, 142114 (2010). https://doi.org/10.1063/1.3383236 , Google ScholarScitation, ISI
  12. 12. P. Schlotter, R. Schmidt, and J. Schneider, Appl. Phys. A 64, 417 (1997). https://doi.org/10.1007/s003390050498 , Google ScholarCrossref
  13. 13. B. Damilano, A. Dussaigne, J. Brault, T. Huault, F. Natali, P. Demolon, P. De Mierry, S. Chenot, and J. Massies, Appl. Phys. Lett. 93, 101117 (2008). https://doi.org/10.1063/1.2982097 , Google ScholarScitation
  14. 14. B. Damilano, P. Demolon, J. Brault, T. Huault, F. Natali, and J. Massies. J. Appl. Phys. 108, 073115 (2010). https://doi.org/10.1063/1.3490895 , Google ScholarScitation, ISI
  15. 15. W. Utsumi, H. Saitoh, H. Kaneko, T. Watanuk, K. Aoki, and O. Shimomuta, Nat. Mater. 2, 735 (2003). https://doi.org/10.1038/nmat1003 , Google ScholarCrossref
  16. 16. A. Denis, C. Goglio, and G. Demazeau, Mater. Sci. Eng. R 50, 167 (2006). https://doi.org/10.1016/j.mser.2005.11.001 , Google ScholarCrossref
  17. 17. M. Bockowski, P. Strak, I. Grzegory, and S. Porowski, in Technology of Gallium Nitride Crystal Growth, Springer Series in Materials Science, edited by D. Ehrentraut, E. Meissner, and M. Bockowski, (Springer Verlag, 2010), Ch. 10. Google Scholar
  18. 18. K. Motoki, SEI Tech. Rev. 70, 28 (2010). Google Scholar
  19. 19. Y. Mori, M. Imade, K. Murakami, H. Takazawa, H. Imabayashi, Y. Todoroki, K. Kitamoto, M. Maruyama, M. Yoshimura, Y. Kitaoka, and T. Sasaki, J. Cryst. Growth 350, 72 (2012). https://doi.org/10.1016/j.jcrysgro.2011.12.026 , Google ScholarCrossref
  20. 20. T. Hashimoto, F. Wu, J. S. Speck, and S. Nakamura, Nat. Mater. 6, 568 (2007). https://doi.org/10.1038/nmat1955 , Google ScholarCrossref
  21. 21. M. Bockowski, I. Grzegory, B. Łucznik, T. Sochacki, G. Nowak, B. Sadovyi, P, Strak, G. Kamler, E. Litwin-Staszewska, and S. Porowski, J. Cryst. Growth 350, 5 (2012). https://doi.org/10.1016/j.jcrysgro.2011.12.013 , Google ScholarCrossref
  22. 22. I. Grzegory, M. Bockowski, B. Łucznik, J. L. Weyher, E. Litwin-Staszewska, L. Konczewicz, B. Sadovyi, P. Nowakowski, and S. Porowski, J. Cryst. Growth 350, 50 (2012). https://doi.org/10.1016/j.jcrysgro.2011.12.021 , Google ScholarCrossref
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