ABSTRACT
In this work, pristine graphene, nitrogen-doped graphene and boron-doped graphene were synthesized by a facile solvothermal process using potassium or lithium nitride as catalyst. The formation mechanism of graphene and doped graphene was discussed, and the chlorine gas generated during the reaction performed a significant role. High yield of graphene and doped graphene can be produced via the solvothermal route with relatively mild conditions, and X-ray photoelectron energy spectroscopy analysis confirmed the doping status and concentration of nitrogen or boron within graphene sheets. Especially, electrical properties of graphene-based field effect transistors revealed that the introduction of nitrogen or boron atoms into graphene sheets can effectively tailor electrical property of graphene from conducting characteristics to semiconducting behaviors.
ACKNOWLEDGMENTS
This work was partially supported by the Taishan Scholar Overseas Distinguished Professorship program from the Shandong Province Government, People's Republic of China, the National Natural Science Foundation of China (51172113), the Shandong Natural Science Foundation for Distinguished Young Scholars (JQ201118), the Qingdao Municipal Science and Technology Commission (12-1-4-136-hz), a Visiting Scientist Fellowship from the National Center for Electron Microscopy (NCEM) at Lawrence Berkeley National Laboratory, USA, and a sabbatical award from Missouri State University.
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