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Published Online: 29 November 2012
Accepted: October 2012

Static and dynamic properties of multi-section InGaN-based laser diodes

Journal of Applied Physics 112, 103112 (2012); https://doi.org/10.1063/1.4768163
L. Sulmoni1, J.-M. Lamy1, J. Dorsaz1, A. Castiglia1, J.-F. Carlin1, W. G. Scheibenzuber2, U. T. Schwarz2, X. Zeng3, D. L. Boïko3, and N. Grandjean1
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ABSTRACT
We have studied multi-section InGaN multiple-quantum-well (MQW) laser diodes grown on c-plane freestanding GaN substrate consisting of an absorber section (AS) and an amplifier gain section. As a result of the interplay between external bias applied to the AS and the internal piezoelectric and spontaneous polarization fields inherent to c-plane InGaN MQWs, the devices exhibit non-linear non-monotonic variations of the threshold current due to the quantum-confined Stark effect that takes place in the AS MQWs. We report on how this effect tailors the lasing characteristics and lasing dynamics, leading from a steady-state cw lasing regime for an unbiased AS to self-pulsation and Q-switching regimes at high negative absorber bias.

ACKNOWLEDGMENTS

The present work was supported by the NCCR Quantum Photonics program of the Swiss National Science Foundation and by the EC Seventh Framework Programme FP7/2007-2013 under the Grant Agreement No. 238556 (FEMTOBLUE). The authors would like to thank Dr. Raphaël Butté for careful reading of the manuscript.

REFERENCES
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  1. © 2012 American Institute of Physics.

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