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No Access Submitted: 24 March 2012 Accepted: 06 April 2012 Published Online: 26 April 2012

  • High sensitivity low field magnetically gated resistive switching in CoFe2O4/La0.66Sr0.34MnO3 heterostructure

Appl. Phys. Lett. 100, 172412 (2012); https://doi.org/10.1063/1.4707373
Vishal Thakare1,2, a), Guozhong Xing3, a), Haiyang Peng3, Abhimanyu Rana1,2, a), Onkar Game1,2, P. Anil Kumar4, a), Arun Banpurkar2, Yesappa Kolekar2,5, Kartik Ghosh5, Tom Wu3, b), D. D. Sarma4,6, c), and Satishchandra B. Ogale1, d)
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  • Vishal Thakare
  • Guozhong Xing
  • Haiyang Peng
  • Abhimanyu Rana
  • Onkar Game
  • P. Anil Kumar
  • Arun Banpurkar
  • Yesappa Kolekar
  • Kartik Ghosh
  • Tom Wu
  • D. D. Sarma
  • Satishchandra B. Ogale
ABSTRACT
The phenomenon of resistive switching (RS) has been demonstrated in several non-magnetic and some magnetic oxide systems, however the “magnetic” aspect of magnetic oxides has not been emphasized especially in terms of low field tunability. In our work, we examined the CoFe2O4/La0.66Sr0.34MnO3 all-magnetic oxide interface system for RS and discovered a very sharp (bipolar) transition at room temperature that can be gated with high sensitivity by low magnetic fields (∼0–100 mT). By using a number of characterizations, we show that this is an interface effect, which may open up interesting directions for manipulation of the RS phenomenon.
V.T. thanks CSIR for the award of Senior Research Fellowship. The authors would like to thank Dr. Pushan Ayyub (TIFR, Mumbai) for help with TEM and Dr. Sankar Dhar for RBS (NUS, Singapore). The authors at NCL, Pune acknowledge support from CSIR (Network project), DAE-BRNS (CRP), and UGC (Indore) grant. D.D.S. acknowledges support from DAE-BRNS (CRP) and J. C. Bose Fellowship, while T.W. acknowledges funding from National Research Foundation of Singapore.

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  1. © 2012 American Institute of Physics.

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