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No Access Submitted: 02 August 1999 Accepted: 11 October 1999 Published Online: 29 December 1999

  • Field effect on the impact ionization rate in semiconductors

Journal of Applied Physics 87, 781 (2000); https://doi.org/10.1063/1.371941
R. Redmer, J. R. Madureira, and N. Fitzer
  • Fachbereich Physik, Universität Rostock, D-18051 Rostock, Germany
    • S. M. Goodnick
  • Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-5706
    • W. Schattke
  • Institut für Theoretische Physik, Christian-Albrechts-Universität Kiel, Leibnizstraße 15, D-24118 Kiel, Germany
    • E. Schöll
  • Institut für Theoretische Physik, Technische Universität Berlin, D-10623 Berlin, Germany
    • more...View Contributors
    • R. Redmer
    • J. R. Madureira
    • N. Fitzer
    • S. M. Goodnick
    • W. Schattke
    • E. Schöll
    ABSTRACT
    Impact ionization plays a crucial role for electron transport in semiconductors at high electric fields. We derive appropriate quantum kinetic equations for electron transport in semiconductors within linear response theory. The field-dependent collision integral is evaluated for the process of impact ionization. A known, essentially analytical result is reproduced within the parabolic band approximation [W. Quade et al., Phys. Rev. B 50, 7398 (1994)]. Based on the numerical results for zero field strengths but realistic band structures, a fit formula is proposed for the respective field-dependent impact ionization rate. Explicit results are given for GaAs, Si, GaN, ZnS, and SrS.

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