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No Access Submitted: 20 October 1997 Accepted: 25 November 1997 Published Online: 04 June 1998

  • High-field transport and electroluminescence in ZnS phosphor layers

Journal of Applied Physics 83, 3176 (1998); https://doi.org/10.1063/1.367085
Manfred Dür and Stephen M. Goodnick
  • Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-5706
    • Shankar S. Pennathur
  • Altera Corporation, 101 Innovation Drive, San Jose, California 95539
    • John F. Wager
  • Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331-3211
    • Martin Reigrotzki and Ronald Redmer
  • Universität Rostock, Fachbereich Physik, Universitätsplatz 3, D-18051 Rostock, Germany
    • more...View Contributors
    • Manfred Dür
    • Stephen M. Goodnick
    • Shankar S. Pennathur
    • John F. Wager
    • Martin Reigrotzki
    • Ronald Redmer
    ABSTRACT
    A full-band Monte Carlo simulation of the high-field electron transport in the ZnS phosphor layer of an alternating-current thin-film electroluminescent device is performed. The simulation includes a nonlocal empirical pseudopotential band structure for ZnS and the relevant scattering mechanisms for electrons in the first four conduction bands, including band-to-band impact ionization and impact excitation of Mn2+ luminescent centers. The steady-state electron energy distribution in the ZnS layer is computed for phosphor fields from 1 to 2 MV/cm. The simulation reveals a substantial fraction of electrons with energies in excess of the Mn2+ impact excitation threshold. The computed impact excitation yield for carriers transiting the phosphor layer exhibits an approximately linear increase with increasing phosphor field above threshold. The onset of Mn2+ impact excitation coincides with the onset of band-to-band impact ionization of electron-hole pairs which prevents electron runaway at high electric fields.

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