MENU
  • Scitation Home
SUBMIT YOUR ARTICLE

Thank you

For your interest in the Journal of Applied Physics

Check for updates on crossmark
Prev Next
No Access
Published Online: 17 August 1998
Accepted: October 1996

Investigation of the effect of hydrogen on electrical and optical properties in chemical vapor deposited on homoepitaxial diamond films

Journal of Applied Physics 81, 744 (1997); https://doi.org/10.1063/1.364299
Kazushi Hayashi, Sadanori Yamanaka, and Hideyuki Watanabe
  • Electrotechnical Laboratory, 1-1-4, Umezono, Tsukuba, Ibaraki 305, Japan
    • Takashi Sekiguchi
  • Institute for Materials Research, Tohoku University, 2-1-1, Katahira, Sendai 980-77, Japan
    • Hideyo Okushi and Koji Kajimura
  • Electrotechnical Laboratory, 1-1-4, Umezono, Tsukuba, Ibaraki 305, Japan
    • more...
  • Correction: Journal of Applied Physics 81, 7078 (1997)
    • ABSTRACT
    We have investigated electrical and optical properties of the high-conductivity layers formed in both undoped and B-doped diamond films prepared by chemical vapor deposition. It is found that both hydrogenated undoped and B-doped diamond films have high-concentration holes of ∼1018 cm−3 at 297 K. These films exhibit little temperature dependence of the hole concentration between 120 and 400 K, while that of the oxidized B-doped film has a strong temperature dependence with an activation energy 0.38 eV. The Hall mobility of all the hydrogenated films of ∼30 cm2/Vs at 297 K is one to two orders of magnitude smaller than that of the oxidized B-doped film and increases with increasing temperature. The I−V characteristics of Al–Schottky contacts to the hydrogenated undoped film show excellent rectification properties and the temperature dependence of their forward characteristics is well explained by a junction theory inclusive of the tunneling process, i.e., thermionic-field emission theory, indicating that the depletion layer becomes thin due to high-density space charge in the depletion layer. We have also found a broad cathodoluminescence peak at around 540 nm in the hydrogenated films which disappears with subsequent oxidation treatment, indicating the existence of hydrogen-related gap states in the subsurface region of as-deposited homoepitaxial diamond films. High density hydrogen is detected in the subsurface region of the hydrogenated films by secondary ion mass spectroscopy. These experimental results suggest the existence of hydrogen-induced shallow acceptors in the surface region of as-deposited (hydrogenated) diamond films and that the difference between the hydrogenated and the oxidized films observed in both electrical and optical properties originates from hydrogen incorporated in the subsurface region.

    REFERENCES
    Section:
    Previous sectionNext section

    1. 1. See, for example, J. T. Glass, D. L. Dreifus, R. E. Fauber, B. A. Fox, M. L. Hartsell, R. B. Henard, J. S. Holmes, D. Malta, L. S. Plano, A. J. Tessmer, G. J. Tessmer, and H. A. Wynand, in Proceedings of the Fourth International Conference on New Diamond Science and Technology, edited by S. Saito, N. Fujimori, O. Fukunaga, M. Kamo, K. Kobashi, and M. Yoshikawa (MYU, Tokyo, 1994), p. 355. Google Scholar
    2. 2. Appearance of this layer depends on a cooling down procedure after diamond film deposition. Cooling down in oxygen-containing atmosphere leads to an increase in resistivity of the films. See, for example, Y. Mori, A. Hatta, T. Ito, and A. Hiraki, Jpn. J. Appl. Phys. 1 31, L1718 (1992). Google ScholarCrossref
    3. 3. S. A. Grot, G. Sh. Gildenblat, C. W. Hatfield, C. R. Wronski, A. R. Badzian, T. Badzian, and R. Messier, IEEE Electron Device Lett. 11, 100 (1990). Google ScholarCrossref
    4. 4. M. I. Landstrassand K. V. Ravi, Appl. Phys. Lett. 55, 1391 (1989). Google ScholarScitation
    5. 5. S. Albinand L. Watkins, Appl. Phys. Lett. 56, 1454 (1990). Google ScholarScitation
    6. 6. Y. Mori, H. Kawarada, and A. Hiraki, Appl. Phys. Lett. 58, 940 (1991). Google ScholarScitation
    7. 7. H. Shiomi, Y. Nishibayashi, and N. Fujimori, Jpn. J. Appl. Phys. 1 30, 1363 (1991). Google ScholarCrossref
    8. 8. T. Maki, S. Shikama, M. Komori, Y. Sakaguchi, K. Sakuta, and T. Kobayashi, Jpn. J. Appl. Phys. 1 31, L1446 (1992). Google ScholarCrossref
    9. 9. H. Kawarada, M. Aoki, H. Sasaki, and K. Tsugawa, Diam. Relat. Mater. 3, 961 (1994). Google ScholarCrossref
    10. 10. H. Kiyota, E. Matsushima, K. Sato, H. Okushi, T. Ando, M. Kamo, Y. Sato, and M. Iida, Appl. Phys. Lett. 67, 3596 (1995). Google ScholarScitation
    11. 11. K. Hayashi, S. Yamanaka, H. Okushi, and K. Kajimura, Appl. Phys. Lett. 68, 376 (1996). Google ScholarScitation
    12. 12. K. Hayashi, H. Watanabe, S. Yamanaka, H. Okushi, K. Kajimura, and T. Sekiguchi, Appl. Phys. Lett. 69, 1122(1996). Google ScholarScitation
    13. 13. J. Shirafujiand T. Sugino, Diam. Relat. Mater. 5, 706 (1996). Google ScholarCrossref
    14. 14. H. Kawarada, H. Sasaki, and A. Sato, Phys. Rev. B 52, 11351 (1995). Google ScholarCrossref
    15. 15. Y. Muto, T. Sugino, J. Shirafuji, and K. Kobashi, Appl. Phys. Lett. 59, 843 (1991). Google ScholarScitation
    16. 16. R. E. Stallcup, A. F. Aviles, and J. M. Perez, Appl. Phys. Lett. 66, 2331 (1995). Google ScholarScitation
    17. 17. See articles in Hydrogen in Semiconductors, edited by M. Stutzmann and J. Chevallier (North-Holland, Amsterdam, 1991). Google Scholar
    18. 18. G. S. Higashi, Y. J. Chabal, G. W. Trucks, and K. Raghavachari, Appl. Phys. Lett. 56, 656 (1990). Google ScholarScitation
    19. 19. H. Tokumoto, Y. Morita, and K. Miki, Mater. Res. Soc. Symp. Proc. 259, 409 (1992). Google ScholarCrossref
    20. 20. B. Pate, in Diamond: Electronic Properties and Applications, edited by L. S. Pan and D. R. Kania (Kluwer Academic, Boston, 1995), Chap. 2. Google Scholar
    21. 21. In addition to various models attributed to hydrogen, some researchers pointed out, based on the analysis of Raman scattering spectra, the contribution of amorphous carbon to this conductivity of as-grown diamond surfaces (Refs. 3 and 15); however, Kawarada et al. (Ref. 14) and Stallcup et al. (Ref. 16) observed STS spectra with the p-type conduction on the 2×1 reconstructed diamond surfaces, indicating this p-type conduction originates from the diamond phase. Google Scholar
    22. 22. T. Sekiguchiand K. Sumino, Rev. Sci. Instrum. 66, 4277 (1995). Google ScholarScitation
    23. 23. K. Kanayaand S. Okayama, J. Phys. D 5, 43 (1972). Google ScholarCrossref
    24. 24. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), Chap. 1. Google Scholar
    25. 25. A. T. Collinsand A. W. S. Williams, J. Phys. C 4, 1789 (1971). Google ScholarCrossref
    26. 26. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, 2nd ed. (Clarendon, Oxford, 1988), Chap. 3. Google Scholar
    27. 27. A. T. Collins and E. C. Lightowlers, in The Properties of Diamond, edited by J. E. Fields (Academic, London, 1979), Chap. 3. Google Scholar
    28. 28. F. A. Padovaniand R. Stratton, Solid-State Electron. 9, 695 (1966). Google ScholarCrossref
    29. 29. M. Aokiand H. Kawarada, Jpn. J. Appl. Phys. 1 33, L708 (1994). Google ScholarCrossref
    30. 30. A. T. Collins, Diam. Relat. Mater. 1, 457 (1992). Google ScholarCrossref
    31. 31. A. A. Gippius, V. S. Vavilov, A. M. Zaitsev, and B. S. Zhakupbekov, Physica (Amsterdam) 116B, 187 (1983). Google ScholarCrossref
    32. 32. V. S. Vavilov, A. A. Gippius, A. M. Zaitsev, B. V. Deryagin, B. V. Spitsyn, and A. E. Aleksenko, Sov. Phys. Semicond. 14, 1078 (1980). Google Scholar
    33. 33. W. Zhang, B. Hu, E. Xie, Y. Zhang, L. Han, Z. Song, and G. Chen, J. Mater. Res. 10, 2350 (1995). Google ScholarCrossref
    34. 34. E. Holzschuh, W. Kündig, P. F. Meier, B. D. Patterson, J. P. F. Sellschop, M. C. Stemmet, and H. Appel, Phys. Rev. A 25, 1272 (1982). Google ScholarCrossref
    35. 35. T. L. Estle, S. Estreicher, and D. S. Marynick, Phys. Rev. Lett. 58, 1547 (1987). Google ScholarCrossref
    36. 36. P. Briddon, R. Jones, and G. M. S. Lister, J. Phys. C 21, L1027 (1988). Google ScholarCrossref
    37. 37. J. P. F. Sellschop, C. C. P. Madiba, and H. J. Annegarn, Nucl. Instrum. Methods 168, 529 (1980). Google ScholarCrossref
    38. 38. M. I. Landstrassand K. V. Ravi, Appl. Phys. Lett. 55, 975 (1989). Google ScholarScitation
    1. © 1997 American Institute of Physics.

    Article Metrics

    Views
    200
    Citations
    Crossref 207
    Web of Science
    ISI 256

    Altmetric

    Please Note: The number of views represents the full text views from December 2016 to date. Article views prior to December 2016 are not included.