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No Access Submitted: 31 May 1996 Accepted: 25 July 1996 Published Online: 17 August 1998

  • Impact ionization rate and high‐field transport in ZnS with nonlocal band structure

Journal of Applied Physics 80, 5054 (1996); https://doi.org/10.1063/1.363550
Martin Reigrotzki and Ronald Redmer
  • Universität Rostock, Fachbereich Physik, Universitätsplatz 3, D‐18051 Rostock, Germany
    • Insook Lee, Shankar S. Pennathur, Manfred Dür, John F. Wager, and Stephen M. Goodnick
  • Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis, Oregon 97331‐3211
    • Peter Vogl
  • Walter Schottky Institut, Technische Universität München, D‐85748 Garching, Germany
    • Harald Eckstein and Wolfgang Schattke
  • Institut für Theoretische Physik, Christian‐Albrechts‐Universität Kiel, Leibnizstraße 15, D‐24118 Kiel, Germany
    • more...View Contributors
    • Martin Reigrotzki
    • Ronald Redmer
    • Insook Lee
    • Shankar S. Pennathur
    • Manfred Dür
    • John F. Wager
    • Stephen M. Goodnick
    • Peter Vogl
    • Harald Eckstein
    • Wolfgang Schattke
    ABSTRACT
    The impact ionization rate in ZnS is calculated using a nonlocal empirical pseudopotential band structure and compared to previous results using a local calculation. The two resulting rates are then compared and simple fit formulas are presented. These are included in an ensemble Monte Carlo simulation of electron transport in bulk ZnS. The calculated impact ionization rate is then compared to experimental impact ionization coefficient data; reasonable agreement between the experimental data and the calculated impact ionization rate is obtained with an appropriate choice of optical deformation potentials.

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    1. © 1996 American Institute of Physics.

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