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Published Online: 05 May 2011
Accepted: April 2011

Recombination coefficients of GaN-based laser diodes

Journal of Applied Physics 109, 093106 (2011); https://doi.org/10.1063/1.3585872
W. G. Scheibenzuber1, U. T. Schwarz1, a), L. Sulmoni2, J. Dorsaz2, J.-F. Carlin2, and N. Grandjean2
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  • 1Fraunhofer Institute for Applied Solid State Physics IAF, Tullastrasse 72, D-79108 Freiburg, Germany
  • 2Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

  • a)Electronic mail: .

ABSTRACT
We measure the charge carrier recombination coefficients of InGaN quantum wells by analyzing the dynamical properties of (Al,In)GaN laser diodes emitting in the violet spectral range. Relaxation oscillations and turn-on delays are fitted to a rate equation model including a charge carrier density dependent recombination rate. Using optical gain spectroscopy we can directly determine the injection efficiency of the devices and thereby separate the effect of charge carrier leakage from that of carrier recombination. We find a third-order recombination coefficient of (4.5±0.9)×10-31cm6s-1 which is in agreement with theoretical predictions for phonon- and alloy-disorder-assisted Auger scattering.

ACKNOWLEDGMENTS

W. Scheibenzuber acknowledges stimulating discussions with E. Kioupakis and C. Van de Walle. This research has been funded by the European Community’s Seventh Framework Programme (FP7/2007-2013, Future and Emerging Technologies – FET) under Grant No. 238556 (FEMTOBLUE).

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