No Access
Published Online: 28 March 2011
Accepted: February 2011
Appl. Phys. Lett. 98, 133301 (2011); https://doi.org/10.1063/1.3566979
more...View Affiliations
The open circuit voltage Voc and the corresponding charge carrier density were measured in dependence of temperature and illumination intensity by current–voltage and charge extraction measurements for poly(3-hexylthiophene-2,5-diyl) (P3HT):[6,6]-phenyl-C61 butyric acid methyl ester (PCBM) and P3HT:bisPCBM solar cells. At lower temperatures a saturation of Voc was observed which can be explained by energetic barriers at the contacts (metal–insulator–metal model). Such injection barriers can also influence Voc at room temperature and limit the performance of the working solar cell, as was assured by macroscopic device simulations on temperature dependent IV characteristics. However, under most conditions—room temperature and low barriers—Voc is given by the effective band gap.
D.R.’s work is financed by the European Commission in the framework of the Dephotex Project (Grant No. 214459). C.D. gratefully acknowledges the support of the Bavarian Academy of Sciences and Humanities. V.D.’s work at the ZAE Bayern is financed by the Bavarian Ministry of Economic Affairs, Infrastructure, Transport and Technology.
  1. 1. C. Deibel and V. Dyakonov, Rep. Prog. Phys. 73, 096401 (2010). https://doi.org/10.1088/0034-4885/73/9/096401, Google ScholarCrossref
  2. 2. C. J. Brabec, A. Cravino, D. Meissner, N. S. Sariciftci, T. Fromherz, M. T. Rispens, L. Sanchez, and J. C. Hummelen, Adv. Funct. Mater. 11, 374 (2001). https://doi.org/10.1002/1616-3028(200110)11:5<374::AID-ADFM374>3.0.CO;2-W, Google ScholarCrossref
  3. 3. K. Vandewal, K. Tvingstedt, A. Gadisa, O. Inganäs, and J. V. Manca, Phys. Rev. B 81, 125204 (2010). https://doi.org/10.1103/PhysRevB.81.125204, Google ScholarCrossref
  4. 4. C. Deibel, T. Strobel, and V. Dyakonov, Adv. Mater. (Weinheim, Ger.) 22, 4097 (2010). https://doi.org/10.1002/adma.201000376, Google ScholarCrossref
  5. 5. C. M. Ramsdale, J. A. Barker, A. C. Arias, J. D. MacKenzie, R. H. Friend, and N. C. Greenham, J. Appl. Phys. 92, 4266 (2002). https://doi.org/10.1063/1.1506385, Google ScholarScitation
  6. 6. M. C. Scharber, D. Mühlbacher, M. Koppe, P. Denk, C. Waldauf, A. J. Heeger, and C. J. Brabec, Adv. Mater. (Weinheim, Ger.) 18, 789 (2006). https://doi.org/10.1002/adma.200501717, Google ScholarCrossref
  7. 7. K. Vandewal, A. Gadisa, W. D. Oosterbaan, S. Bertho, F. Banishoeib, I. Van Severen, L. Lutsen, T. J. Cleij, D. Vanderzande, and J. V. Manca, Adv. Funct. Mater. 18, 2064 (2008). https://doi.org/10.1002/adfm.200800056, Google ScholarCrossref
  8. 8. L. J. A. Koster, V. D. Mihailetchi, R. Ramaker, and P. W. M. Blom, Appl. Phys. Lett. 86, 123509 (2005). https://doi.org/10.1063/1.1889240, Google ScholarScitation, ISI
  9. 9. D. Cheyns, J. Poortmans, P. Heremans, C. Deibel, S. Verlaak, B. P. Rand, and J. Genoe, Phys. Rev. B 77, 165332 (2008). https://doi.org/10.1103/PhysRevB.77.165332, Google ScholarCrossref
  10. 10. P. Schilinsky, C. Waldauf, and C. J. Brabec, Appl. Phys. Lett. 81, 3885 (2002). https://doi.org/10.1063/1.1521244, Google ScholarScitation, ISI
  11. 11. M. Limpinsel, A. Wagenpfahl, M. Mingebach, C. Deibel, and V. Dyakonov, Phys. Rev. B 81, 085203 (2010). https://doi.org/10.1103/PhysRevB.81.085203, Google ScholarCrossref
  12. 12. C. Deibel, T. Strobel, and V. Dyakonov, Phys. Rev. Lett. 103, 036402 (2009). https://doi.org/10.1103/PhysRevLett.103.036402, Google ScholarCrossref
  13. 13. C. G. Shuttle, A. Maurano, R. Hamilton, B. O’Regan, J. C. de Mello, and J. R. Durrant, Appl. Phys. Lett. 93, 183501 (2008). https://doi.org/10.1063/1.3006316, Google ScholarScitation, ISI
  14. 14. V. Dyakonov, Physica E 14, 53 (2002). https://doi.org/10.1016/S1386-9477(02)00359-4, Google ScholarCrossref
  15. 15. A. Foertig, A. Baumann, D. Rauh, V. Dyakonov, and C. Deibel, Appl. Phys. Lett. 95, 052104 (2009). https://doi.org/10.1063/1.3202389, Google ScholarScitation
  16. 16. M. Lenes, G. -J. A. H. Wetzelaer, F. B. Kooistra, S. C. Veestra, J. C. Hummelen, and P. W. M. Blom, Adv. Mater. (Weinheim, Ger.) 20, 2116 (2008). https://doi.org/10.1002/adma.200702438, Google ScholarCrossref
  17. 17. A. Wagenpfahl, C. Deibel, and V. Dyakonov, IEEE J. Sel. Top. Quantum Electron. 16, 1759 (2010). https://doi.org/10.1109/JSTQE.2010.2042142, Google ScholarCrossref
  18. 18. H. Bässler, Phys. Status Solidi B 175, 15 (1993). https://doi.org/10.1002/pssb.2221750102, Google ScholarCrossref
  19. 19. I. G. Hill, A. Rajagopal, and A. Kahn, J. Appl. Phys. 84, 3236 (1998). https://doi.org/10.1063/1.368477, Google ScholarScitation
  20. 20. Z. -L. Guan, J. B. Kim, H. Wang, C. Jaye, D. A. Fischer, Y. -L. Loob, and A. Kahn. Org. Electron. 11, 1779 (2010). https://doi.org/10.1016/j.orgel.2010.07.023, Google ScholarCrossref
  21. 21. V. D. Mihailetchi, P. W. M. Blom, J. C. Hummelen, and M. T. Rispens, J. Appl. Phys. 94, 6849 (2003). https://doi.org/10.1063/1.1620683, Google ScholarScitation
  1. © 2011 American Institute of Physics.