ABSTRACT
We have developed a technique to fabricate quantum dot (QD) solar cells with direct doping of Si into InAs QDs in GaNAs strain-compensating matrix in order to control the quasi-Fermi level of intermediate QD states. The Si atoms were evenly incorporated into QDs during the assembling stage of growth such that a uniform array of partially filled QDs has been obtained. Nonradiative recombination losses were also reduced by Si doping and a photocurrent increase due to two-step photon absorption was clearly measured at room temperature detected under filtered air-mass 1.5 solar spectrum.
ACKNOWLEDGMENTS
We would like to gratefully acknowledge Professors A. Luque and A. Martí of Universidad Politécnica de Madrid, and N. Ekins-Daukes of Imperial College London for their valuable comments and discussion. This work is supported by New Energy and Industrial Technology Development Organization (NEDO), and Ministry of Economy, Trade and Industry (METI), Japan. Strategic International Cooperative Program by Japan Science and technology Agency (JST) is also acknowledged.
- 1. A. J. Nozik, Physica E (Amsterdam) 14, 115 (2002). https://doi.org/10.1016/S1386-9477(02)00374-0, Google ScholarCrossref
- 2. W. Shockley and H. J. Queisser, J. Appl. Phys. 32, 510 (1961). https://doi.org/10.1063/1.1736034, Google ScholarScitation, ISI
- 3. S. Tomić, T. S. Jones, and N. M. Harrison, Appl. Phys. Lett. 93, 263105 (2008). https://doi.org/10.1063/1.3058716, Google ScholarScitation
- 4. A. Luque and A. Martí, Phys. Rev. Lett. 78, 5014 (1997). https://doi.org/10.1103/PhysRevLett.78.5014, Google ScholarCrossref
- 5. A. Martí, L. Cuadra, and A. Luque, IEEE Trans. Electron Devices 48, 2394 (2001). https://doi.org/10.1109/16.954482, Google ScholarCrossref
- 6. A. Martí, N. López, E. Antolín, E. Cánovas, and A. Luque, Appl. Phys. Lett. 90, 233510 (2007). https://doi.org/10.1063/1.2747195, Google ScholarScitation
- 7. G. S. Solomon, J. A. Trezza, A. F. Marshall, and J. S. Harris, Jr., Phys. Rev. Lett. 76, 952 (1996). https://doi.org/10.1103/PhysRevLett.76.952, Google ScholarCrossref
- 8. S. A. Blokhin, A. V. Sakharov, A. M. Nadtochy, A. S. Pauysov, M. V. Maximov, N. N. Ledentsov, A. R. Kovsh, S. S. Mikhrin, V. M. Lantratov, S. A. Mintairov, N. A. Kaluzhniy, and M. Z. Shvarts, Semiconductors 43, 514 (2009). https://doi.org/10.1134/S1063782609040204, Google ScholarCrossref
- 9. Y. Okada, N. Shiotsuka, H. Komiyama, K. Akahane, and N. Ohtani, Proceedings of the 20th European Photovoltaic Solar Energy Conference (WIP, Munich, 2005), p. 51. Google Scholar
- 10. V. Popescu, G. Bester, M. C. Hanna, A. G. Norman, and A. Zunger, Phys. Rev. B 78, 205321 (2008). https://doi.org/10.1103/PhysRevB.78.205321, Google ScholarCrossref
- 11. S. M. Hubbard, C. D. Cress, C. G. Bailey, R. P. Raffaelle, S. G. Bailey, and D. M. Wilt, Appl. Phys. Lett. 92, 123512 (2008). https://doi.org/10.1063/1.2903699, Google ScholarScitation, ISI
- 12. R. Oshima, A. Takata, and Y. Okada, Appl. Phys. Lett. 93, 083111 (2008). https://doi.org/10.1063/1.2973398, Google ScholarScitation, ISI
- 13. Y. Okada, R. Oshima, and A. Takata, J. Appl. Phys. 106, 024306 (2009). https://doi.org/10.1063/1.3176903, Google ScholarScitation, ISI
- 14. Y. Shoji, R. Oshima, A. Takata, T. Morioka, and Y. Okada, Proceedings of the 35th IEEE Photovoltaic Specialists Conference (IEEE, New York, 2010), p. 1859. Google Scholar
- 15. A. Martí, E. Antolín, C. R. Stanley, C. D. Farmer, N. López, P. Días, E. Cánovas, P. G. Linares, and A. Luque, Phys. Rev. Lett. 97, 247701 (2006). https://doi.org/10.1103/PhysRevLett.97.247701, Google ScholarCrossref
- 16. R. Strandberg and T. W. Reenaas, J. Appl. Phys. 105, 124512 (2009). https://doi.org/10.1063/1.3153141, Google ScholarScitation, ISI
- 17. K. Yoshida, Y. Okada, and N. Sano, Appl. Phys. Lett. 97, 133503 (2010) https://doi.org/10.1063/1.3488815; Google ScholarScitation
Proceedings of the 25th European Photovoltaic Solar Energy Conference (WIP, Munich, 2010), p. 545. , Google Scholar - 18. T. Morioka, R. Oshima, A. Takata, Y. Shoji, T. Inoue, T. Kita, and Y. Okada, Proceedings of the 35th IEEE Photovoltaic Specialists Conference (IEEE, New York, 2010), p. 1834. Google Scholar
- 19. T. Kudo, T. Inoue, T. Kita, and O. Wada, J. Appl. Phys. 104, 074305 (2008). https://doi.org/10.1063/1.2987469, Google ScholarScitation
- 20. T. Inoue, S. Kido, K. Sasayama, T. Kita, and O. Wada, J. Appl. Phys. 108, 063524 (2010). https://doi.org/10.1063/1.3483252, Google ScholarScitation, ISI
- 21. R. S. Attaluri, S. Annamalai, K. T. Posani, A. Stintz, and S. Krishna, J. Vac. Sci. Technol. B 24, 1553 (2006). https://doi.org/10.1116/1.2190676, Google ScholarCrossref
- 22. J. Phillips, K. Kamath, X. Zhou, N. Chervela, and P. Bhattacharya, Appl. Phys. Lett. 71, 2079 (1997). https://doi.org/10.1063/1.119347, Google ScholarScitation
- 23. A. Takata, R. Oshima, Y. Shoji, K. Akahane, and Y. Okada, Proceedings of the 35th IEEE Photovoltaic Specialists Conference (IEEE, New York, 2010), p. 1877. Google Scholar
Please Note: The number of views represents the full text views from December 2016 to date. Article views prior to December 2016 are not included.
