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No Access Submitted: 23 January 2010 Accepted: 12 May 2010 Published Online: 10 August 2010

  • Electrical properties of rectifying contacts on selectively carrier controlled grown ZnO thin films

Journal of Applied Physics 108, 034514 (2010); https://doi.org/10.1063/1.3447870
A. Bhattacharya, R. K. Gupta, P. K. Kahol, and K. Ghosha)
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  • A. Bhattacharya
  • R. K. Gupta
  • P. K. Kahol
  • K. Ghosh
ABSTRACT
Controlled decrease in carrier concentration (Nd) through postdeposition annealing of ZnO is shown to provide a crossover from Ohmic to rectifying junction behavior. Highly oriented (002) ZnO films with silver contact yield nonlinear I-V characteristics below a carrier concentration of ∼1023 m−3 and linear Ohmic behavior above 1023 m−3. The specific differential resistance around zero bias is practically independent of carrier concentration up to 1023 m−3 and then decreases with increase in carrier concentration. These results are in excellent agreement with standard theoretical models of current transport phenomena in metal–semiconductor contacts. While the differential junction resistance at lower carrier concentrations gradually becomes less governed by carrier concentrations and current transport is dominated by thermionic emission and diffusion mechanism, it decreases as a function of carrier concentration at higher carrier concentrations. These results show that metal–oxide semiconductor junctions behave precisely like conventional metal–semiconductor junctions.

ACKNOWLEDGMENTS

One of the authors (A.B.) would like to acknowledge Dr. S. J. Pearton, Department of Materials Science and Engineering, University of Florida, Gainesville for helpful discussion. Authors are thankful to Mr. Rishi Patel, Centre for Applied Science and Engineering, Missouri State University for collecting AFM data.

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