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No Access Submitted: 06 March 2010 Accepted: 22 March 2010 Published Online: 13 April 2010

  • Remote plasma assisted growth of graphene films

Appl. Phys. Lett. 96, 154101 (2010); https://doi.org/10.1063/1.3387812
Gopichand Nandamuria), Sergei Roumimov, and Raj Solanki
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  • Gopichand Nandamuri
  • Sergei Roumimov
  • Raj Solanki
ABSTRACT
Single and multiple layers of graphene films were grown on (111) oriented single crystals of nickel and polycrystalline nickel films using remote plasma assisted chemical vapor deposition. Remote plasma was employed to eliminate the effect of the plasma electrical field on the orientation of the grown graphene films, as well as to reduce the growth temperature compared to conventional chemical vapor deposition. The electrical and optical properties, including high resolution transmission electron microscopy of these films, suggest that this approach is both versatile and scalable for potential large area optoelectronic applications.
This investigation was supported in part by the Office of Naval Research through Oregon Nanoscience and Microtechnologies Institute (ONAMI).

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