ABSTRACT
We demonstrate an InGaN laser diode, in which the waveguiding quality of the device is improved by the introduction of highly doped (plasmonic) layer constituting an upper part of the GaN substrate. Thanks to this, we were able to suppress the electromagnetic mode leakage into the substrate without generating additional strain in the structure, in contrast to the typical design relying on thick AlGaN claddings. The plasmonic substrate is built as a stack of gallium nitride layers of various electron concentrations deposited by a combination of hydride epitaxy and high-pressure solution method. The mentioned improvements led to the reduction of the threshold current density of our devices down to and to the optimization of the near and far field pattern.
The research was partially supported by the European Union within European Regional Development Fund, through grant Innovative Economy (Grant No. POIG.01.01.02-00-008/08) and by Polish Ministry of Science and State Committee for Scientific Research, Project No. R00-O0025/3.
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