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Published Online: 31 December 2009
Accepted: December 2009

Improvement of the poly-3-hexylthiophene transistor performance using small molecule contact functionalization

Appl. Phys. Lett. 95, 263313 (2009); https://doi.org/10.1063/1.3276694
Rebecca Winter1, a), Maria S. Hammer1, Carsten Deibel1, and Jens Pflaum1,2, b)
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  • Original article: APL: Organic Electronics and Photonics 2 (12), 347 (2009)
    • ABSTRACT
    We demonstrate an approach to improve poly-3-hexylthiophene field effect transistors by modifying the gold contacts with monolayer thick pentacenequinone (PQ) or naphthalene (NL). The effective contact resistance is reduced by a factor of two and sixteen for interlayers of PQ and NL, respectively. The observation is attributed to different injection barriers at the metal-organic interface caused by the functionalization and to an additional tunneling barrier enhancing the on/off ratios. This barrier yields to activation energies of 37 meV (NL) and 104 meV (PQ) below 190 K, which are smaller than without functionalization, 117 meV.
    The DFG is acknowledged for financial support (Project No. PF385).

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