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No Access Submitted: 24 February 2009 Accepted: 07 April 2009 Published Online: 24 April 2009

  • Crystallographic dependence of loss in domain engineered relaxor-PT single crystals

Appl. Phys. Lett. 94, 162906 (2009); https://doi.org/10.1063/1.3125431
Shujun Zhang1, a), Nevin P. Sherlock2, Richard J. Meyer Jr.2, and Thomas R. Shrout1
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  • Shujun Zhang
  • Nevin P. Sherlock
  • Richard J. Meyer Jr.
  • Thomas R. Shrout
ABSTRACT
Domain engineered ⟨001⟩ oriented relaxor-PbTiO3 ferroelectric crystals exhibit high electromechanical properties and low mechanical Q values, analogous to “soft” piezoelectric ceramics. However, their characteristic low dielectric loss (≤0.5%) and strain-electric field hysteresis are reflective of “hard” piezoelectric materials. In this work, the electromechanical behavior of relaxor-PT crystals was investigated as a function of crystallographic orientations. It was found that the electrical and mechanical losses in crystals depends on the specific engineered domain configuration, with high Q observed for the ⟨110⟩ orientation. The high Q, together with high electromechanical coupling (∼0.9) for ⟨110⟩ oriented relaxor-PT crystals, make them promising candidates for resonant based high power transducer applications.
This work was supported by the ONR and NIH under Contract No. P41-RR11795. The authors thank to Dr. Jun Luo from TRS Technologies Inc., for offering the relaxor-PT single crystals. The authors also thank Ms. Ru Xia for the sample preparation.

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