No Access Submitted: 18 February 2008 Accepted: 17 April 2008 Published Online: 24 June 2008
Journal of Applied Physics 103, 123528 (2008);
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  • Doo-Hyeb Youn
  • Seung-Hwan Lee
  • Han-Cheol Ryu
  • Se-Young Jung
  • Seung-Bum Kang
  • Min-Hwan Kwack
  • Sungil Kim
  • Sang-Kuk Choi
  • Mun-Cheol Baek
  • Kwang-Yong Kang
  • Chang-Seop Kim
  • Ki-Ju Yee
  • Young-Bin Ji
  • Eui-Su Lee
  • Tae-In Jeon
  • Seong-Jin Kim
  • Sanjeev Kumar
  • Gil-Ho Kim
This paper investigates how postgrowth annealing affects the structure and the electro-optical properties of low-temperature grown GaAs (LT-GaAs). A systematic study of as-grown and annealed LT-GaAs revealed that the carrier lifetime is directly related to the density of the An duster and distance between As clusters. The Ga/As compositional ratio and the crystal structure of As clusters were observed for the first time. The As/Ga ratio of the As clusters is higher than that obtained from the LT-GaAs. The carrier lifetime of the annealed LT-GaAs increases as the annealing temperature increases from 400 (less than 30 fs) to 800°C (824 fs). Under the annealing temperatures ranging from 600 to 700°C for 90 s, we observed the emission of terahertz radiation using the annealed LT-GaAs grown at temperatures ranging from 260 to 320°C.
This work was supported by a grant from the Ministry of Information and Communication in the South Korea, under Project No. A1100-0601-0110. The authors would like to thank Mr. Ho-Sang Kwack and Professor Yong-Hoon Cho of the Chungbuk National University for their analysis with photoluminescence measurements; Ms. Soo-Hyun Kang and Mr. Kyoo-Ho Jung of the Dong-Guk University for their assistance with Hall measurements; and Dr. Chul Kang of the Advanced Photonic Research for helpful discussions. The authors also thank Mrs. Jung-Suck Lee of the Electronics and Telecommunications Research Institute (ETRI) for x-ray measurements as well as Mr. Dae-Won Kang and Mr. Ju-Wook Lee of the ETRI for TEM analysis.
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