No Access Submitted: 01 August 2007 Accepted: 29 September 2007 Published Online: 26 October 2007
Appl. Phys. Lett. 91, 173122 (2007); https://doi.org/10.1063/1.2802552
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  • J. Wu
  • M. Eastman
  • T. Gutu
  • M. Wyse
  • J. Jiao
  • S.-M. Kim
  • M. Mann
  • Y. Zhang
  • K. B. K. Teo
This study focuses on the fabrication of two nanodevice prototypes which utilized vertical and horizontal carbon nanotubes used the focused ion beam to localize the catalysts, followed by plasma-enhanced chemical vapor deposition. First, metal-gated carbon nanotube field emitter arrays were fabricated on multilayer substrates containing an imbedded catalyst layer. Second, horizontally aligned single-walled carbon nanotubes were grown on a transmission electron microscopy grid. This allows the carbon nanotubes to be directly analyzed in a transmission electron microscope. It is expected that the methodology introduced here will open up opportunities for the direct fabrication of carbon nanotube based nanodevices.
Financial support for this research was provided in part by the National Science Foundation under Award Nos. ECS-0348277, ECS-0520891, and DMR-0649280.
  1. 1. K. Banerjee and N. Srivastava, Proceedings of the 43rd ACM/IEEE on Design Automation Conference, 2006 (unpublished), p. 809. Google Scholar
  2. 2. F. Chen and D. Gardner, IEEE Electron Device Lett. 19, 12 (1998). Google Scholar
  3. 3. P. Kapur, J. P. McVittie, and K. C. Saraswat, IEEE Trans. Electron Devices 49, 4 (2002). Google Scholar
  4. 4. B. Q. Wei, R. Vajtai, and P. M. Ajayan, Appl. Phys. Lett. https://doi.org/10.1063/1.1396632 79, 1172 (2001). Google ScholarScitation, ISI
  5. 5. P. G. Collins and P. Avouris, Sci. Am. 283, 62–69 (2000). Google ScholarCrossref
  6. 6. R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and Ph. Avouris, Appl. Phys. Lett. https://doi.org/10.1063/1.122477 73, 2447 (1998). Google ScholarScitation, ISI
  7. 7. A. V. Melechko, V. I. Merkulov, T. E. McKnight, M. A. Guillorn, K. L. Klein, D. H. Lowndes, and M. L. Simpson, J. Appl. Phys. https://doi.org/10.1063/1.1857591 97, 041301 (2005). Google ScholarScitation, ISI
  8. 8. J. F. Wu, L. F. Dong, C. C. Pan, and J. Jiao, Int. J. Nanosci. 5, 579 (2006). Google ScholarCrossref
  9. 9. G. Pirio, P. Legagneux, D. Pribat, K. B. K. Teo, M. Chhowalla, G. A. J. Amaratunga, and W. I. Milne, Nanotechnology https://doi.org/10.1088/0957-4484/13/1/301 13, 1 (2001). Google ScholarCrossref
  10. 10. G. S. Duesberg, A. P. Graham, M. Liebau, R. Seidel, E. Unger, F. Kreupl, and W. Hoenlein, Nano Lett. https://doi.org/10.1021/nl025906c 3, 257 (2003). Google ScholarCrossref
  11. 11. M. Nihei, M. Horibe, A. Kawabata, and Y. Awano, Jpn. J. Appl. Phys., Part 1 https://doi.org/10.1143/JJAP.43.1856 43, 1856 (2004). Google ScholarCrossref, ISI
  12. 12. R. G. Lacerda, K. B. K. Teo, A. S. Teh, M. H. Yang, S. H. Dalal, D. A. Jefferson, J. H. Durrell, N. L. Rupesinghe, D. Roy, G. A. J. Amaratunga, F. Wyczisk, and P. Legagneux, J. Appl. Phys. https://doi.org/10.1063/1.1794359 96, 4456 (2004). Google ScholarScitation
  13. 13. Y. Homma, D. Takagi, and Y. Kobayashi, Appl. Phys. Lett. https://doi.org/10.1063/1.2162799 88, 023115 (2006). Google ScholarScitation
  14. 14. Y. Choi, J. Spippel-Oakley, and A. Ural, Appl. Phys. Lett. https://doi.org/10.1063/1.2360889 89, 153130 (2006). Google ScholarScitation
  15. 15. S. Talapatra, S. Kar, S. K. Pal, R. Vajtai, L. Ci, P. Victor, M. M. Shaijumon, S. Kaur, O. Nalamasu, and P. M. Ajayan, Nat. Nanotechnol. https://doi.org/10.1038/nnano.2006.56 1, 112 (2006). Google ScholarCrossref
  16. 16. Y. Tzeng, Y. Chen, C. Liu, and V. Krishnardula, Proceedings of the Fourth IEEE Conference on Nanotechnology, 2004 (unpublished), p. 495. Google Scholar
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