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Published Online: 18 September 2007
Accepted: August 2007

Interplay of built-in potential and piezoelectric field on carrier recombination in green light emitting InGaN quantum wells

Appl. Phys. Lett. 91, 123503 (2007); https://doi.org/10.1063/1.2786602
Ulrich T. Schwarza) and H. Braun
  • Naturwissenschaftliche Fakultät II-Physik, Universität Regensburg, Universitätsstraße 31, D-93053 Regensburg, Germany
    • K. Kojima and Y. Kawakami
  • Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
    • S. Nagahama and T. Mukai
  • Nitride Semiconductor Research Laboratory, Nichia Corporation, 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan
    • more...View Affiliations
    ABSTRACT
    The authors measure the interplay of piezoelectric field and built-in potential on carrier recombination and quantum confined Stark effect in green light emitting InGaN quantum wells by modulating the external bias voltage of the pn junction. Time-resolved electroluminescence shows a temporal separation of carrier injection into the active region and radiative recombination within the InGaN quantum wells. During the time when the bias voltage is off, the piezoelectric field is partially compensated by the built-in potential of the pn junction, resulting in an increased radiative recombination rate.
    Ulrich T. Schwarz acknowledges support by an invited fellowship from the Japan Society for the Promotion of Science (JSPS). Kazunobu Kojima is supported by a JSPS research fellowship for young scientists. This work is partially supported by COE.

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    1. © 2007 American Institute of Physics.

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