• Selective growth of single-crystalline ZnO nanowires on doped silicon

We report the growth of single-crystalline ZnO nanowires on $n$- and $p$-type Si wafers by electrodeposition. On strongly doped $n$-type Si high-quality nanowires can be grown under similar conditions as used for metallic substrates. For low electron concentrations occurring in weakly $n$-type or in $p$-type wafers, nanowire growth is inhibited. This difference allows selective growth in strongly $n$-type areas. The inhibited growth on weakly $n$-type and $p$-type wafers can be improved by applying stronger cathodic electrode potentials or by illuminating the growth area. The wires on $n\text{‐}\mathrm{Si}$ show efficient electroluminescence covering the visible and extending into the ultraviolet spectral range.