No Access Submitted: 31 January 2007 Accepted: 28 May 2007 Published Online: 21 June 2007
Appl. Phys. Lett. 90, 253113 (2007); https://doi.org/10.1063/1.2749870
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• Hyungbin Son
• Georgii G. Samsonidze
• Jing Kong
• Yingying Zhang
• Xiaojie Duan
• Jin Zhang
• Zhongfan Liu
• Mildred S. Dresselhaus
Axial strain is introduced into individual single wall carbon nanotubes (SWCNTs) suspended from a trench-containing $Si∕SiO2$ substrate by employing the van der Waals interaction between the SWCNT and the substrate. Resonance Raman spectroscopy is used to characterize the strain, and up to 3% axial strain is observed. It is also found that a significant friction between the SWCNT and the substrate, on the order of $10pN∕nm$, governs the localization and propagation of the strain in the SWCNTs sitting on the substrate. This method can be applied to introduce strain into materials sitting on a substrate, such as a graphene sheet.
H.S. and J.K. acknowledge the support of the Intel Higher Education Program and the MSD Focus Center, one of five research centers funded under the Focus Center Research Program and a Semiconductor Corporation program. G.G.S. and M.S.D. acknowledge the support from NSF under Grant No. DMR04-05538. Y.Z., X.D., J.Z. and Z.L. acknowledge the support from NSFC (90206023) and MOST (2001CB6105). This work was carried out using the Raman facility in the Spectroscopy Laboratory supported by NSF CHE 0111370 and by NIH RR02594 grants.
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