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Published Online: 26 April 2007
Accepted: February 2007

Mode dynamics of high power (InAl)GaN based laser diodes grown on bulk GaN substrate

Journal of Applied Physics 101, 083109 (2007); https://doi.org/10.1063/1.2718881
T. Swietlika), G. Franssen, R. Czerneckib), M. Leszczynskib), C. Skierbiszewski, I. Grzegoryb), T. Suski, and P. Perlinb)
  • Institute of High Pressure Physics “Unipress,” Sokolowska 29/37, 01-142 Warsaw, Poland
    • C. Lauterbach and U. T. Schwarz
  • Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany
    • more...View Affiliations

    • a)Electronic address:

      b)Also at TopGaN Ltd., ul. Sokolowska 29/37, 01–142 Warsaw, Poland.

    ABSTRACT
    Time resolved scanning near-field optical microscopy was employed to study spatial and temporal dynamics of III-nitride-system-based blue light emitting laser diodes with a ridge width of 20 μm deposited on high pressure grown bulk GaN substrate. Devices were driven in a pulse regime with a current pulse length of 500 ns. Temperature effects and fluctuation in carrier concentration resulted in a complicated dynamic picture of the photon field evolution. The guided modes did not reach a stable form during a driving pulse. Due to a large antiguiding factor which is characteristic for nitride compounds, filamentation processes were clearly observable leading to the formation of up to four filaments across the ridge, each about 3 μm. Analysis of spatial and temporal evolution of the guided mode revealed strong light leakage into the highly absorptive substrate. Separation between the adjacent cavity modes equals to 0.57 nm which corresponds to the cavity length of 50 μm being very close to the thickness of GaN substrate. Detection of near-field-to-far-field evolution evidenced a considerable beam steering as a result of temperature and carrier induced refractive index changes.

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