No Access Submitted: 10 January 2006 Accepted: 13 April 2006 Published Online: 30 May 2006
Appl. Phys. Lett. 88, 222504 (2006); https://doi.org/10.1063/1.2207987
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  • K. Yakushiji
  • K. Saito
  • S. Mitani
  • K. Takanashi
  • Y. K. Takahashi
  • K. Hono
Current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) of the multilayer thin film using a full-Heusler Co2MnSi (CMS) phase as ferromagnetic electrodes has been investigated. A multilayer of Cr buffer (10nm)CMS (50nm)Cr spacer (3nm)CMS (10nm)Cr cap (3nm) was grown on a MgO(100) substrate. The 50nm thick CMS layer which was deposited on the Cr buffer at 573K was epitaxially grown and had an L21 structure. The resistance change-area product (ΔRA) at room temperature was 19mΩμm2, which is one order of magnitude larger than those in previously reported trilayer systems, resulting in the MR ratio of 2.4%. A possible origin of the enhanced ΔRA is considered to be the large spin polarization in a high-quality L21 CMS film.
The authors thank Y. Murakami, M. Ishiguro, and T. Ashino for the film composition analysis. The sample preparation was performed at Advanced Research Center of Metallic Glasses, IMR, Tohoku University. This work was in part supported by the Ministry of Education, Science, Sports and Culture, Grant-in-Aid for Scientific Research (B), 17360346, 2005.
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