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Published Online: 11 January 2006
Accepted: November 2005
Appl. Phys. Lett. 88, 021104 (2006); https://doi.org/10.1063/1.2164907
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A microscopic theory is used to analyze optical gain in InGaNGaN quantum wells (QW). Experimental data are obtained from Hakki–Paoli measurements on edge-emitting lasers for different carrier densities. The simulations are based on the solution of the quantum kinetic Maxwell–Bloch equations, including many-body effects and a self-consistent treatment of piezoelectric fields. The results confirm the validity of a QW gain description for this material system with a substantial inhomogeneous broadening due to structural variation. They also give an estimate of the nonradiative recombination rate.
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