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Published Online: 06 December 2005
Accepted: October 2005

Local strain and potential distribution induced by single dislocations in GaN

Journal of Applied Physics 98, 116102 (2005); https://doi.org/10.1063/1.2137879
N. Gmeinwiesera), P. Gottfriedsen, U. T. Schwarz, and W. Wegscheider
  • Angewandte und Experimentelle Physik, Universität Regensburg, 93040 Regensburg, Germany
    • R. Clos, A. Krtschil, and A. Krost
  • Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg, Germany
    • A. Weimar, G. Brüderl, A. Lell, and V. Härle
  • OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, 93049 Regensburg, Germany
    • more...View Affiliations
    ABSTRACT
    The presence of a threading edge dislocation terminated at the surface of GaN bulk substrates causes a dipole-like strain state ranging over a several micrometer square area. The local strain state is derived from microphotoluminescence mappings of the near-band-edge spectrum and is quantitatively reproduced by a three-dimensional elastic deformation model approach. These results are compared with the local electrical potential distortion due to the core charge and attracted defects as analyzed by scanning surface-potential microscopy. In contrast to the local strain, the potential profile does not show a dipole-like behavior and decreases laterally faster.

    REFERENCES
    Section:
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    1. 1. T. Sugahara, H. Sato, M. Hao, Y. Naoi, S. Kurai, S. Tottori, K. Yamashita, K. Nishino, L. Romano, and S. Sakai, Jpn. J. Appl. Phys., Part 2 https://doi.org/10.1143/JJAP.37.L398 37, L398 (1998). Google ScholarCrossref
    2. 2. D. Cherns, S. J. Henley, and F. A. Ponce, Appl. Phys. Lett. https://doi.org/10.1063/1.1369610 78, 2691 (2001). Google ScholarScitation, ISI
    3. 3. S. Dassonneville, A. Amokrane, B. Sieber, J.-L. Farvacque, B. Beaumont, and P. Gibart, J. Appl. Phys. https://doi.org/10.1063/1.1349864 89, 3736 (2001). Google ScholarScitation, ISI
    4. 4. F. Habel and M. Seyboth, Phys. Status Solidi C 0, 2448 (2003). Google ScholarCrossref
    5. 5. J. Christen and T. Riemann, Phys. Status Solidi B https://doi.org/10.1002/1521-3951(200111)228:2<419::AID-PSSB419>3.0.CO;2-E 288, 419 (2001). Google ScholarCrossref
    6. 6. S. Kret, P. Dluzewski, G. Maciejewski, V. Potin, J. Chen, P. Ruterana, and G. Nouet, Diamond Relat. Mater. https://doi.org/10.1016/S0925-9635(02)00005-5 11, 910 (2002). Google ScholarCrossref
    7. 7. A. Krtschil, A. Dadgar, and A. Krost, Appl. Phys. Lett. https://doi.org/10.1063/1.1565687 82, 2263 (2003). Google ScholarScitation
    8. 8. M. Mayer, A. Pelzmann, M. Kamp, K. J. Ebeling, H. Teisseyre, G. Nowak, M. Leszczyński, I. Grzegory, S. Porowski, and G. Karczewski, Jpn. J. Appl. Phys., Part 2 https://doi.org/10.1143/JJAP.36.L1634 36, L1634 (1997). Google ScholarCrossref
    9. 9. K. Thonke et al., in Proceedings of the International Workshop on Nitride Semiconductors, IPAP Conf. Series 1 (Inst. Pure & Appl. Phys., Tokyo, Japan, 2000), p. 587–590. Google Scholar
    10. 10. U. T. Schwarz, P. J. Schuck, M. D. Mason, R. D. Grober, M. Roskowski, S. Einfeldt, and R. F. Davis, Phys. Rev. B https://doi.org/10.1103/PhysRevB.67.045321 67, 045321 (2003). Google ScholarCrossref
    11. 11. N. Gmeinwieser, K. Engl, P. Gottfriedsen, U. T. Schwarz, J. Zweck, W. Wegscheider, S. Miller, H.-J. Lugauer, A. Leber, A. Weimar, A. Lell, and V. Härle, J. Appl. Phys. https://doi.org/10.1063/1.1784617 96, 3666 (2004). Google ScholarScitation, ISI
    12. 12. C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager III, E. Jones, Z. Liliental-Weber, M. Rubin, and E. R. Weber, Phys. Rev. B https://doi.org/10.1103/PhysRevB.54.17745 54, 17745 (1996). Google ScholarCrossref
    13. 13. J.-M. Wagner and F. Bechstedt, Phys. Rev. B https://doi.org/10.1103/PhysRevB.66.115202 66, 115202 (2002). Google ScholarCrossref
    14. 14. J. P. Hirth and J. Lothe, Theory of Dislocations (Krieger, Malabar, 1992). Google Scholar
    15. 15. E. H. Yoffe, Philos. Mag. 6, 1147 (1961). Google ScholarCrossref
    16. 16. W. Shan, R. J. Hauenstein, A. J. Fischer, J. J. Song, W. G. Perry, M. D. Bremser, R. F. Davis, and B. Goldenberg, Phys. Rev. B https://doi.org/10.1103/PhysRevB.54.13460 54, 13460 (1996). Google ScholarCrossref
    17. 17. J. A. Majewski, M. Städele, and P. Vogl, MRS Internet J. Nitride Semicond. Res. 1, 30 (1996). Google ScholarCrossref
    1. © 2005 American Institute of Physics.

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